Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HRH3 | Q9Y5N1 | 15/20 | 0.55 |
| ▸ | KCNH2 | Q12809 | 4/20 | 0.55 |
| ▸ | CYP2C9 | P11712 | 5/20 | 0.44 |
| ▸ | CYP3A4 | P08684 | 4/20 | 0.44 |
| ▸ | MEN1 | O00255 | 1/20 | 0.41 |
| ▸ | NPC1 | O15118 | 1/20 | 0.41 |
| ▸ | POLB | P06746 | 1/20 | 0.41 |
| ▸ | RAB9A | P51151 | 1/20 | 0.41 |
| ▸ | BLM | P54132 | 1/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.41 |
| ▸ | GPR35 | Q9HC97 | 1/20 | 0.41 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.40 |
| ▸ | HAO1 | Q9UJM8 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7724347 | 0.92 | HRH3 (0.44) | HRH3KCNH2CYP2C9CYP3A4RAB9A | |
| SCHEMBL9808038 | 0.81 | HRH3 (0.71) | HRH3KCNH2CYP2C9CYP3A4NFE2L2 | |
| SCHEMBL10798982 | 0.80 | HRH3 (0.60) | HRH3KCNH2CYP2C9CYP3A4MEN1 | |
| SCHEMBL27421433 | 0.80 | THRB (0.60) | HRH3KCNH2CYP2C9CYP3A4MEN1 | |
| SCHEMBL419937 | 0.79 | THRB (0.41) | — | |
| SCHEMBL2586831 | 0.79 | NPC1 (0.54) | HRH3KCNH2CYP2C9CYP3A4MEN1 | |
| SCHEMBL6654521 | 0.78 | HRH3 (0.58) | HRH3KCNH2CYP2C9CYP3A4NPC1 | |
| SCHEMBL8682954 | 0.77 | HRH3 (0.60) | HRH3KCNH2CYP2C9CYP3A4MEN1 | |
| SCHEMBL8683784 | 0.77 | HRH3 (0.60) | HRH3KCNH2CYP2C9CYP3A4MEN1 | |
| SCHEMBL4339149 | 0.77 | HRH3 (0.60) | HRH3KCNH2CYP2C9CYP3A4MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 61 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9217919-B2 | Photosensitive composition, pattern-forming method using the composition, and resin used in the composition | FUJIFILM CORPORATION (JP) | 2015-12-22 | — | — | US | disclosed |
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-8852845-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method using the same, and resin | FUJIFILM CORPORATION (JP) | 2014-10-07 | — | — | US | disclosed |
| US-8735048-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2014-05-27 | — | — | US | disclosed |
| EP-2529276-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM Corporation (JP) | 2012-12-05 | — | — | EP | disclosed |
| US-20120301817-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-11-29 | — | — | US | disclosed |
| US-20120202141-A1 | CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120202141-A1 | CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20030198894-A1 | Resist composition for electron beam, EUV or X-ray | FUJI PHOTO FILM CO., LTD. | 2003-10-23 | — | — | US | disclosed |
| EP-1338921-A2 | Resist composition for electron beam, X-ray or EUV | Fuji Photo Film Co., Ltd. (JP) | 2003-08-27 | — | — | EP | disclosed |
| US-20030054287-A1 | Resist composition | FUJI PHOTO FILM CO., LTD. | 2003-03-20 | — | — | US | disclosed |
| US-20030039916-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2003-02-27 | — | — | US | disclosed |
| US-6489080-B2 | CONTAINING ACID GENERATOR | FUJI PHOTO FILM CO., LTD. (JP) | 2002-12-03 | — | — | US | disclosed |
| US-20020058206-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2002-05-16 | — | — | US | disclosed |
| EP-1193556-A1 | Positive resist composition | Fuji Photo Film Co., Ltd. (JP) | 2002-04-03 | — | — | EP | disclosed |
| US-20020015916-A1 | POSITIVE RESIST COMPOSITION | FUJI PHOTO FILM CO., LTD. (JP) | 2002-02-07 | — | — | US | disclosed |
| US-6265135-B1 | ARYL SULFONIUM OR IODONIUM COMPOUND WHICH GENERATES BENZENE-, NAPHTHALENE- OR ANTHRACENESULFONIC ACID WHICH IS SUBSTITUTED BY AT LEAST ONE FLUORINE ATOM AND/OR AT LEAST ONE GROUP CONTAINING A FLUORINE ATOM. | FUJI PHOTO FILM CO., LTD. (JP) | 2001-07-24 | — | — | US | disclosed |
| US-6207343-B1 | RESIN CONTAINING GROUPS WHICH DECOMPOSE BY THE ACTION OF AN ACID TO ENHANCE ITS SOLUBILITY IN AN ALKALINE DEVELOPING SOLUTION AND A COMPOUND WHICH GENERATES AN ACID UPON IRRADIATION WITH ACTINIC RAYS OR RADIATION | FUJI PHOTO FILM CO., LTD. (JP) | 2001-03-27 | — | — | US | disclosed |