SCHEMBL677621

SCHEMBL677621

C[CH]c1ccc(C(C)(C)C)c(C(C)(C)C)c1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTGS1 P23219 6/20 0.41
PTGS2 P35354 6/20 0.41
HTT P42858 2/20 0.36
GABBR2 O75899 2/20 0.34
GABBR1 Q9UBS5 2/20 0.34
SMN1; SMN2 Q16637 4/20 0.33
ALDH1A1 P00352 4/20 0.33
MAPT P10636 3/20 0.33
ALOX15 P16050 3/20 0.33
CYP1A2 P05177 3/20 0.33
HSD17B10 Q99714 3/20 0.33
CYP2C9 P11712 3/20 0.33
MEN1 O00255 2/20 0.33
TP53 P04637 2/20 0.33
CYP3A4 P08684 2/20 0.33
TSHR P16473 2/20 0.33
BLM P54132 2/20 0.33
KMT2A Q03164 2/20 0.33
ALOX5 P09917 2/20 0.33
LMNA P02545 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27625397 0.80 ALDH1A1 (0.57) PTGS1PTGS2HTTGABBR2GABBR1
SCHEMBL11328597 0.79 ALDH1A1 (0.42) PTGS1PTGS2GABBR2GABBR1ALDH1A1
SCHEMBL676990 0.74 PTGS1 (0.30) PTGS1PTGS2
SCHEMBL8107824 0.71 HTT (0.61) PTGS1PTGS2HTTGABBR2GABBR1
SCHEMBL9809873 0.69 CA2 (0.48) PTGS1PTGS2HTTSMN1; SMN2ALDH1A1
SCHEMBL16952265 0.69 PTGS1 (0.42) PTGS1PTGS2HTTGABBR2GABBR1
SCHEMBL17594923 0.67 SMN1; SMN2 (0.50) PTGS1PTGS2HTTSMN1; SMN2ALDH1A1
SCHEMBL779415 0.67 ALDH1A1 (0.48) HTTSMN1; SMN2ALDH1A1MAPTALOX15
SCHEMBL29630132 0.67 ALDH1A1 (0.48) HTTSMN1; SMN2ALDH1A1MAPTALOX15
SCHEMBL141087 0.67 CYP1A2 (0.50) HTTSMN1; SMN2ALDH1A1MAPTCYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
EP-1367439-B1 Radiation-sensitive composition FUJIFILM CORP (JP) 2012-08-01 EP disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
EP-2399168-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM Corporation (JP) 2011-12-28 EP disclosed
WO-2010150917-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-29 WO disclosed
EP-1467251-B1 Positive resist composition FUJIFILM CORP (JP) 2010-09-08 EP disclosed
EP-1465010-B1 Positive resist composition FUJIFILM CORP (JP) 2009-10-21 EP disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed
US-6743565-B2 POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR FUJI PHOTO FILM CO., LTD. (JP) 2004-06-01 US disclosed
US-6727033-B2 A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN FUJI PHOTO FILM CO., LTD. (JP) 2004-04-27 US disclosed
US-20040033437-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. 2004-02-19 US disclosed
US-6692883-B2 GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER FUJI PHOTO FILM CO., LTD. (JP) 2004-02-17 US disclosed
EP-1367439-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2003-12-03 EP disclosed
US-6630280-B1 Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness FUJI PHOTO FILM CO., LTD. (JP) 2003-10-07 US disclosed
US-20030134221-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-07-17 US disclosed
US-20030108811-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-06-12 US disclosed
US-20020012866-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-31 US disclosed
US-6207343-B1 RESIN CONTAINING GROUPS WHICH DECOMPOSE BY THE ACTION OF AN ACID TO ENHANCE ITS SOLUBILITY IN AN ALKALINE DEVELOPING SOLUTION AND A COMPOUND WHICH GENERATES AN ACID UPON IRRADIATION WITH ACTINIC RAYS OR RADIATION FUJI PHOTO FILM CO., LTD. (JP) 2001-03-27 US disclosed