SCHEMBL682241

SCHEMBL682241

CCC(C)c1ccc(C(=O)Oc2ccc([S+](c3ccccc3)c3ccccc3)cc2)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 3/20 0.48
▸ TSHR P16473 1/20 0.48
▸ PARP10 Q53GL7 1/20 0.44
▸ KMT2A Q03164 4/20 0.43
▸ MAPT P10636 4/20 0.43
▸ TDP1 Q9NUW8 1/20 0.43
▸ L3MBTL1 Q9Y468 1/20 0.43
▸ PKM P14618 1/20 0.43
▸ PRSS1 P07477 1/20 0.42
▸ ACR P10323 1/20 0.42
▸ MEN1 O00255 2/20 0.41
▸ KDM4E B2RXH2 1/20 0.41
▸ HSP90AA1 P07900 1/20 0.41
▸ HPGD P15428 1/20 0.41
▸ SLC6A2 P23975 1/20 0.41
▸ SLC6A4 P31645 1/20 0.41
▸ SLC6A3 Q01959 1/20 0.41
▸ ESR1 P03372 1/20 0.40
▸ HIF1A Q16665 1/20 0.40
▸ ELANE P08246 3/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13144362 0.89 ALDH1A1 (0.55) ALDH1A1TSHRPARP10KMT2AMAPT
SCHEMBL6721979 0.88 ALDH1A1 (0.56) ALDH1A1TSHRPARP10KMT2AMAPT
SCHEMBL1789851 0.88 ALDH1A1 (0.53) ALDH1A1TSHRPARP10KMT2AMAPT
SCHEMBL13144241 0.85 ALDH1A1 (0.51) ALDH1A1TSHRPARP10KMT2AMAPT
SCHEMBL13144217 0.85 ELANE (0.56) ALDH1A1TSHRPARP10KMT2AMAPT
SCHEMBL6722062 0.85 ALDH1A1 (0.51) ALDH1A1TSHRPARP10KMT2AMAPT
SCHEMBL13144206 0.85 ALDH1A1 (0.51) ALDH1A1TSHRPARP10KMT2AMAPT
SCHEMBL13144203 0.84 TSHR (0.51) ALDH1A1TSHRKMT2AMAPTTDP1
SCHEMBL2740713 0.82 ALDH1A1 (0.48) ALDH1A1TSHRPARP10KMT2AMAPT
SCHEMBL13144211 0.81 STS (0.47) ALDH1A1TSHRPARP10KMT2AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 — — US disclosed
US-9612535-B2 Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-04-04 — — US disclosed
US-9551933-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 — — US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 — — US disclosed
US-9459531-B2 — — 2016-10-04 — — US disclosed
US-9448477-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, manufacturing method of electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-09-20 — — US disclosed
US-9423690-B2 Pattern forming method, electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition, resist film, and method for manufacturing electronic device, and electronic device using the same FUJIFILM CORPORATION (JP) 2016-08-23 — — US disclosed
US-9411230-B2 Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, method for manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2016-08-09 — — US disclosed
US-20160147147-A1 PATTERN FORMING METHOD, ACTINIC RAY SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-05-26 — — US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 — — US disclosed
US-20140272692-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN FUJIFILM CORPORATION (JP) 2014-09-18 — — US disclosed
US-20140227636-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-14 — — US disclosed
US-20140212796-A1 PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-07-31 — — US disclosed
US-20140127627-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN-FORMING METHOD USING THE SAME ITO TAKAYUKI (JP) 2014-05-08 — — US disclosed
US-20130045445-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-02-21 — — US disclosed
US-8329379-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2012-12-11 — — US disclosed
US-20120076997-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-03-29 — — US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 — — US disclosed
US-20120003590-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20100248143-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-09-30 — — US disclosed
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