SCHEMBL6721979

SCHEMBL6721979

CCC(C)c1ccc(OC(=O)c2ccccc2)cc1

nearest known ligand 0.58

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 3/20 0.56
▸ TSHR P16473 1/20 0.56
▸ KMT2A Q03164 7/20 0.54
▸ MAPT P10636 4/20 0.54
▸ TDP1 Q9NUW8 2/20 0.54
▸ L3MBTL1 Q9Y468 1/20 0.54
▸ PKM P14618 1/20 0.54
▸ PARP10 Q53GL7 1/20 0.53
▸ SLC6A2 P23975 1/20 0.49
▸ SLC6A4 P31645 1/20 0.49
▸ SLC6A3 Q01959 1/20 0.49
▸ MEN1 O00255 4/20 0.49
▸ RAB9A P51151 2/20 0.48
▸ ESR1 P03372 1/20 0.47
▸ HIF1A Q16665 1/20 0.47
▸ KDM4E B2RXH2 1/20 0.47
▸ HSP90AA1 P07900 1/20 0.47
▸ HPGD P15428 1/20 0.47
▸ ELANE P08246 2/20 0.46
▸ NPC1 O15118 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13144362 0.95 ALDH1A1 (0.55) ALDH1A1TSHRKMT2AMAPTTDP1
SCHEMBL13144217 0.94 ELANE (0.56) ALDH1A1TSHRKMT2AMAPTTDP1
SCHEMBL1789851 0.94 ALDH1A1 (0.53) ALDH1A1TSHRKMT2AMAPTTDP1
SCHEMBL13144241 0.91 ALDH1A1 (0.51) ALDH1A1TSHRKMT2AMAPTTDP1
SCHEMBL6722062 0.91 ALDH1A1 (0.51) ALDH1A1TSHRKMT2AMAPTTDP1
SCHEMBL13144206 0.91 ALDH1A1 (0.51) ALDH1A1TSHRKMT2AMAPTTDP1
SCHEMBL10529211 0.89 ALDH1A1 (0.51) ALDH1A1TSHRKMT2AMAPTTDP1
SCHEMBL2740713 0.88 ALDH1A1 (0.48) ALDH1A1TSHRKMT2AMAPTTDP1
SCHEMBL682241 0.88 ALDH1A1 (0.48) ALDH1A1TSHRKMT2AMAPTTDP1
SCHEMBL547858 0.88 KMT2A (0.54) ALDH1A1KMT2AMAPTTDP1L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 82 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9958775-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask FUJIFILM CORPORATION (JP) 2018-05-01 — — US disclosed
EP-2721446-B1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORP (JP) 2017-11-22 — — EP disclosed
US-9740097-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-22 — — US disclosed
US-20170168393-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-06-15 — — US disclosed
US-9625813-B2 Chemical amplification resist composition, resist film using the composition, resist-coated mask blanks, resist pattern forming method, photomask and polymer compound FUJIFILM CORPORATION (JP) 2017-04-18 — — US disclosed
US-9612535-B2 Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-04-04 — — US disclosed
US-9563121-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition FUJIFILM CORPORATION (JP) 2017-02-07 — — US disclosed
US-9563121-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition FUJIFILM CORPORATION (JP) 2017-02-07 — — US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 — — US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 — — US disclosed
US-20090111047-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-30 — — US disclosed
US-7521168-B2 Compound that has a reduction potential higher than that of diphenyl iodonium salt and generates an acid upon irradiation of an actinic ray or radiation. FUJIFILM CORPORATION (JP) 2009-04-21 — — US disclosed
US-7504193-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2009-03-17 — — US disclosed
US-20090042124-A1 RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND FUJIFILM CORPORATION (JP) 2009-02-12 — — US disclosed
US-20090004601-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-01-01 — — US disclosed
US-20080286691-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-11-20 — — US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 — — US disclosed
US-7432034-B2 Negative resist composition FUJIFILM CORPORATION (JP) 2008-10-07 — — US disclosed
US-20080241745-A1 Mixture of alkali soluble polymer, crosslinking agent, acid generator ; radiation with actinic radiation; quaternary ammonium compound FUJIFILM CORPORATION (JP) 2008-10-02 — — US disclosed
EP-1975712-A2 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2008-10-01 — — EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090042124-A1 RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND ADH5, SRRM2, ADH1A ALDH1A1 1228/4885TSHR 2329/4885KMT2A 3353/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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