SCHEMBL682247

SCHEMBL682247

CCC(C)c1ccc(OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)O)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.43
TSHR P16473 2/20 0.43
CXCR2 P25025 2/20 0.40
CXCR1 P25024 1/20 0.40
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
MAPT P10636 2/20 0.37
GAA P10253 2/20 0.37
NPC1 O15118 2/20 0.36
RAB9A P51151 2/20 0.36
CASP1 P29466 1/20 0.35
HSP90AA1 P07900 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
SLC7A5 Q01650 1/20 0.34
USP2 O75604 1/20 0.34
PKM P14618 1/20 0.34
HPGD P15428 1/20 0.34
ALOX15 P16050 1/20 0.34
HSD17B10 Q99714 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2740731 0.92 ALDH1A1 (0.46) ALDH1A1TSHRCXCR2CXCR1MEN1
SCHEMBL10183035 0.90 ABCB11 (0.41) ALDH1A1TSHRCXCR2CXCR1GAA
SCHEMBL10180393 0.90 ALDH1A1 (0.42) ALDH1A1TSHRCXCR2CXCR1MEN1
SCHEMBL17931703 0.87 CXCR2 (0.36) ALDH1A1TSHRCXCR2CXCR1MAPT
SCHEMBL10183101 0.86 ALDH1A1 (0.45) ALDH1A1TSHRMEN1KMT2ATDP1
SCHEMBL9963775 0.86 PPARG (0.44) ALDH1A1TSHRMEN1KMT2AMAPT
SCHEMBL15082411 0.86 CXCR2 (0.44) ALDH1A1CXCR2CXCR1MEN1KMT2A
SCHEMBL2740807 0.85 ALDH1A1 (0.47) ALDH1A1TSHRCXCR2CXCR1MEN1
SCHEMBL10183109 0.84 CYP17A1 (0.39) ALDH1A1TSHRNPC1RAB9AHSP90AA1
SCHEMBL17409227 0.84 MEN1 (0.40) ALDH1A1TSHRMEN1KMT2ATDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 125 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11693321-B2 Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-04 US disclosed
US-20180217503-A1 TREATMENT LIQUID AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2018-08-02 US disclosed
US-20180217499-A1 TREATMENT LIQUID AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2018-08-02 US disclosed
US-10031419-B2 Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device FUJIFILM CORPORATION (JP) 2018-07-24 US disclosed
US-20180120701-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-20180120708-A1 RINSING LIQUID, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-20180120705-A1 PATTERN FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-9958775-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask FUJIFILM CORPORATION (JP) 2018-05-01 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9829796-B2 Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2017-11-28 US disclosed
US-20120082939-A1 ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-04-05 US disclosed
US-20120076997-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2012-03-29 US disclosed
US-20120034559-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2012-02-09 US disclosed
US-20120034559-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2012-02-09 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-20120003583-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed
US-20120003590-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-05 US disclosed
US-20110318693-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-12-29 US disclosed
US-20110183263-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 US disclosed
US-20100248143-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed