Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FFAR1 | O14842 | 1/20 | 0.43 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.40 |
| ▸ | TSHR | P16473 | 1/20 | 0.38 |
| ▸ | SLC7A5 | Q01650 | 1/20 | 0.38 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.36 |
| ▸ | MEN1 | O00255 | 1/20 | 0.36 |
| ▸ | MITF | O75030 | 1/20 | 0.36 |
| ▸ | GAA | P10253 | 1/20 | 0.35 |
| ▸ | MAPT | P10636 | 1/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.34 |
| ▸ | GPR88 | Q9GZN0 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL683303 | 0.99 | ALDH1A1 (0.42) | FFAR1ALDH1A1KMT2ATSHRSLC7A5 | |
| SCHEMBL13581436 | 0.93 | ALDH1A1 (0.41) | FFAR1ALDH1A1KMT2ATSHRSLC7A5 | |
| SCHEMBL14196456 | 0.88 | ALDH1A1 (0.38) | FFAR1ALDH1A1KMT2ATSHRSLC7A5 | |
| SCHEMBL6367528 | 0.88 | FFAR1 (0.42) | FFAR1ALDH1A1KMT2ATSHRSLC7A5 | |
| SCHEMBL14049134 | 0.86 | ALDH1A1 (0.42) | FFAR1ALDH1A1KMT2ATSHRSLC7A5 | |
| SCHEMBL14196461 | 0.86 | FFAR1 (0.41) | FFAR1ALDH1A1KMT2ATSHRSLC7A5 | |
| SCHEMBL111625 | 0.86 | ALDH1A1 (0.42) | FFAR1ALDH1A1KMT2ATSHRSLC7A5 | |
| SCHEMBL17175323 | 0.85 | FFAR1 (0.40) | FFAR1ALDH1A1KMT2ATSHRSLC7A5 | |
| SCHEMBL17175360 | 0.85 | KMT2A (0.41) | FFAR1ALDH1A1KMT2ATSHRSLC7A5 | |
| SCHEMBL683300 | 0.85 | ALDH1A1 (0.43) | FFAR1ALDH1A1KMT2ATSHRSLC7A5 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9958775-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask | FUJIFILM CORPORATION (JP) | 2018-05-01 | — | — | US | disclosed |
| US-9612535-B2 | Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-04-04 | — | — | US | disclosed |
| US-9500951-B2 | Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9459531-B2 | — | — | 2016-10-04 | — | — | US | disclosed |
| US-9323153-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same | FUJIFILM CORPORATION (JP) | 2016-04-26 | — | — | US | disclosed |
| US-9323150-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-04-26 | — | — | US | disclosed |
| US-20150370170-A1 | PATTERN FORMING METHOD, ELECTRON BEAM- OR EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-12-24 | — | — | US | disclosed |
| US-9188862-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same | FUJIFILM CORPORATION (JP) | 2015-11-17 | — | — | US | disclosed |
| US-20150293446-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-15 | — | — | US | disclosed |
| US-20150284492-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-08 | — | — | US | disclosed |
| US-7361446-B2 | Sensitivity, high resolution, good pattern profile, used for super-microlithography | FUJIFILM CORPORATION (JP) | 2008-04-22 | — | — | US | disclosed |
| US-7361446-B2 | Sensitivity, high resolution, good pattern profile, used for super-microlithography | FUJIFILM CORPORATION (JP) | 2008-04-22 | — | — | US | disclosed |
| US-7335454-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2008-02-26 | — | — | US | disclosed |
| US-20070218407-A1 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2007-09-20 | — | — | US | disclosed |
| US-7255971-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-08-14 | — | — | US | disclosed |
| US-7235341-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-26 | — | — | US | disclosed |
| US-7214467-B2 | Photosensitive resin composition | FUJIFILM CORPORATION (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7202015-B2 | Positive photoresist composition and pattern making method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-04-10 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |