Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TAAR1 | Q96RJ0 | 1/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.34 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.34 |
| ▸ | TSHR | P16473 | 1/20 | 0.34 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.34 |
| ▸ | ATM | Q13315 | 1/20 | 0.34 |
| ▸ | TP53 | P04637 | 1/20 | 0.33 |
| ▸ | CYP2A6 | P11509 | 1/20 | 0.32 |
| ▸ | LPL | P06858 | 1/20 | 0.32 |
| ▸ | LIPG | Q9Y5X9 | 1/20 | 0.32 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.32 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.32 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.32 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.32 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.32 |
| ▸ | CYP2J2 | P51589 | 1/20 | 0.32 |
| ▸ | PDE4D | Q08499 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.32 |
| ▸ | CYP4F2 | P78329 | 1/20 | 0.32 |
| ▸ | CYP4A11 | Q02928 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8968560 | 0.83 | TAAR1 (0.41) | TAAR1L3MBTL1LMNAMAPT | |
| SCHEMBL682845 | 0.82 | CA1 (0.40) | L3MBTL1TDP1 | |
| SCHEMBL683150 | 0.80 | TDP1 (0.37) | TAAR1L3MBTL1TDP1TSHRMAPK1 | |
| SCHEMBL14263233 | 0.77 | TAAR1 (0.42) | TAAR1L3MBTL1TDP1TSHRMAPK1 | |
| SCHEMBL13093388 | 0.74 | TAAR1 (0.52) | TAAR1L3MBTL1TDP1TSHRMAPK1 | |
| SCHEMBL682714 | 0.74 | KCNH2 (0.43) | TAAR1L3MBTL1TDP1CYP2A6ALDH1A1 | |
| SCHEMBL12776986 | 0.74 | KCNH2 (0.40) | ALDH1A1MAPTSMN1; SMN2 | |
| SCHEMBL13156094 | 0.74 | PPARG (0.45) | L3MBTL1TDP1TSHRMAPK1ATM | |
| SCHEMBL14196416 | 0.73 | ALDH1A1 (0.39) | TAAR1L3MBTL1TDP1TSHRMAPK1 | |
| SCHEMBL682092 | 0.73 | IDO1 (0.42) | L3MBTL1TDP1TSHRMAPK1TP53 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2090932-B1 | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORP (JP) | 2017-05-31 | — | — | EP | disclosed |
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-8426103-B2 | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2013-04-23 | — | — | US | disclosed |
| US-8426103-B2 | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2013-04-23 | — | — | US | disclosed |
| US-8110333-B2 | Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound | FUJIFILM CORPORATION (JP) | 2012-02-07 | — | — | US | disclosed |
| US-8110333-B2 | Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound | FUJIFILM CORPORATION (JP) | 2012-02-07 | — | — | US | disclosed |
| US-20120006788-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| US-20120006788-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| US-8092978-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-20080096130-A1 | POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION | 2008-04-24 | — | — | US | disclosed |
| US-20080096130-A1 | POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION | 2008-04-24 | — | — | US | disclosed |
| US-7361446-B2 | Sensitivity, high resolution, good pattern profile, used for super-microlithography | FUJIFILM CORPORATION (JP) | 2008-04-22 | — | — | US | disclosed |
| US-7361446-B2 | Sensitivity, high resolution, good pattern profile, used for super-microlithography | FUJIFILM CORPORATION (JP) | 2008-04-22 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |