Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HPGD | P15428 | 5/20 | 0.53 |
| ▸ | HSD17B10 | Q99714 | 4/20 | 0.53 |
| ▸ | ALOX15 | P16050 | 3/20 | 0.53 |
| ▸ | EGFR | P00533 | 2/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.47 |
| ▸ | GAA | P10253 | 2/20 | 0.47 |
| ▸ | USP2 | O75604 | 1/20 | 0.47 |
| ▸ | PKM | P14618 | 1/20 | 0.47 |
| ▸ | MAPT | P10636 | 3/20 | 0.46 |
| ▸ | LMNA | P02545 | 1/20 | 0.46 |
| ▸ | TP53 | P04637 | 1/20 | 0.46 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.46 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.46 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.46 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.46 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.46 |
| ▸ | PDE4A | P27815 | 1/20 | 0.46 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.46 |
| ▸ | KDR | P35968 | 1/20 | 0.46 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.46 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL22238868 | 0.88 | HPGD (0.51) | HPGDHSD17B10ALOX15EGFRALDH1A1 | |
| SCHEMBL13898647 | 0.87 | ALDH1A1 (0.45) | HPGDHSD17B10ALOX15ALDH1A1GAA | |
| SCHEMBL13898548 | 0.85 | ALDH1A1 (0.46) | HPGDHSD17B10ALOX15ALDH1A1GAA | |
| SCHEMBL683267 | 0.81 | CA12 (0.56) | HPGDHSD17B10ALOX15EGFRALDH1A1 | |
| SCHEMBL13898650 | 0.81 | ALDH1A1 (0.42) | HPGDHSD17B10ALOX15ALDH1A1GAA | |
| SCHEMBL9017661 | 0.81 | HPGD (0.53) | HPGDHSD17B10ALOX15EGFRALDH1A1 | |
| SCHEMBL14220660 | 0.81 | HPGD (0.49) | HPGDHSD17B10ALOX15EGFRALDH1A1 | |
| SCHEMBL13898423 | 0.80 | CA12 (0.62) | HPGDHSD17B10ALOX15EGFRALDH1A1 | |
| SCHEMBL13144226 | 0.80 | ALDH1A1 (0.40) | HPGDHSD17B10ALOX15ALDH1A1MAPT | |
| SCHEMBL12040292 | 0.80 | HPGD (0.41) | HPGDHSD17B10ALOX15EGFRALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180120705-A1 | PATTERN FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-9005870-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition | FUJIFILM CORPORATION (JP) | 2015-04-14 | — | — | US | disclosed |
| US-8735048-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the composition and pattern forming method | FUJIFILM CORPORATION (JP) | 2014-05-27 | — | — | US | disclosed |
| US-8642245-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming a pattern using the same | FUJIFILM CORPORATION (JP) | 2014-02-04 | — | — | US | disclosed |
| US-8574814-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition | FUJIFILM CORPORATION (JP) | 2013-11-05 | — | — | US | disclosed |
| US-8546063-B2 | Organic solvent development or multiple development pattern-forming method using electron beams or EUV rays | FUJIFILM CORPORATION (JP) | 2013-10-01 | — | — | US | disclosed |
| US-8507174-B2 | Positive resist composition, pattern forming method using the composition, and compound for use in the composition | FUJIFILM CORPORATION (JP) | 2013-08-13 | — | — | US | disclosed |
| US-20130004888-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20120301817-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-11-29 | — | — | US | disclosed |
| US-20110318693-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-8084183-B2 | Resist composition for electron beam, X-ray, or EUV, and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2011-12-27 | — | — | US | disclosed |
| US-20110183263-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-20110183258-A1 | POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-20090246685-A1 | POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-10-01 | — | — | US | disclosed |
| US-7498116-B2 | Resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2009-03-03 | — | — | US | disclosed |
| US-7498116-B2 | Resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2009-03-03 | — | — | US | disclosed |
| US-20090047598-A1 | RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY, OR EUV, AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-02-19 | — | — | US | disclosed |
| US-20080241750-A1 | RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080241750-A1 | RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110183258-A1 | POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION | CROCC, ACTR2, MRE11 | HPGD 4677/4885HSD17B10 4500/4885ALOX15 1602/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.