Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 9/20 | 0.43 |
| ▸ | EPHX1 | P07099 | 2/20 | 0.41 |
| ▸ | FKBP1A | P62942 | 1/20 | 0.40 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.39 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11337699 | 0.84 | HSD11B1 (0.46) | HSD11B1EPHX1FKBP1ACYP2C9EPHX2 | |
| SCHEMBL18994289 | 0.84 | HSD11B1 (0.46) | HSD11B1EPHX1FKBP1ACYP2C9EPHX2 | |
| SCHEMBL17752188 | 0.84 | HSD11B1 (0.40) | HSD11B1EPHX1FKBP1ACYP2C9EPHX2 | |
| SCHEMBL686142 | 0.82 | HSD11B1 (0.36) | HSD11B1EPHX1FKBP1ACYP2C9EPHX2 | |
| SCHEMBL12416075 | 0.82 | CYP2C9 (0.31) | HSD11B1FKBP1ACYP2C9 | |
| SCHEMBL13194655 | 0.81 | HSD11B1 (0.43) | HSD11B1EPHX1FKBP1ACYP2C9EPHX2 | |
| SCHEMBL20455834 | 0.81 | HSD11B1 (0.43) | HSD11B1EPHX1FKBP1ACYP2C9EPHX2 | |
| SCHEMBL13641979 | 0.80 | — | — | |
| SCHEMBL12753773 | 0.80 | HSD11B1 (0.39) | HSD11B1EPHX1FKBP1ACYP2C9EPHX2 | |
| SCHEMBL12128673 | 0.80 | HSD11B1 (0.46) | HSD11B1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 110 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230367210-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-11-16 | — | — | US | disclosed |
| US-11703758-B2 | Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11656548-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-23 | — | — | US | disclosed |
| US-11640113-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method of manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2023-05-02 | — | — | US | disclosed |
| EP-3508917-B1 | ACTIVE RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND ELECTRONIC DEVICE PRODUCTION METHOD | FUJIFILM CORP (JP) | 2021-04-21 | — | — | EP | disclosed |
| EP-3521926-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE | FUJIFILM Corporation (JP) | 2019-08-07 | — | — | EP | disclosed |
| US-20180181003-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE | FUJIFILM CORPORATION (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180180996-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE | FUJIFILM CORPORATION (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180120708-A1 | RINSING LIQUID, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-9791776-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-10-17 | — | — | US | disclosed |
| US-20110059400-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-03-10 | — | — | US | disclosed |
| US-20110053082-A1 | RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-03-03 | — | — | US | disclosed |
| US-20110053086-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY,LIMITED (JP) | 2011-03-03 | — | — | US | disclosed |
| US-20110039208-A1 | PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-02-17 | — | — | US | disclosed |
| US-20110039209-A1 | COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-02-17 | — | — | US | disclosed |
| US-20110033804-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-02-10 | — | — | US | disclosed |
| US-20110014567-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20110014566-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-01-20 | — | — | US | disclosed |
| US-20100330497-A1 | CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-30 | — | — | US | disclosed |
| US-20100304296-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110059400-A1 | PHOTORESIST COMPOSITION | C1R, C1S, CCNT1 | HSD11B1 3239/4885EPHX1 1871/4885FKBP1A 1095/4885 |
| US-20100304296-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | C1S, H1-0, H1-2 | HSD11B1 1105/4885EPHX1 3047/4885FKBP1A 1203/4885 |
| US-20110014567-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | XPA, XPOT, ERCC4 | HSD11B1 444/4885EPHX1 3648/4885FKBP1A 339/4885 |
| US-20110014566-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | XPA, NPPA, ERCC4 | HSD11B1 1462/4885EPHX1 2467/4885FKBP1A 385/4885 |
| US-20110053086-A1 | COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | OR10J3, C1R, C9 | HSD11B1 1035/4885EPHX1 1277/4885FKBP1A 3110/4885 |
| US-20110039209-A1 | COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME | RCOR3, RCN1, HRH4 | HSD11B1 1229/4885EPHX1 1816/4885FKBP1A 1811/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.