Methacrylic Acid

Methacrylic Acid

SCHEMBL6862971

C=C(C)C(=O)O.CC(=Cc1ccccc1)CC1CO1

nearest known ligand 0.44

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
AKR1C3 P42330 1/20 0.44
ALDH1A1 P00352 6/20 0.40
TSHR P16473 2/20 0.40
KDM4E B2RXH2 4/20 0.39
HPGD P15428 1/20 0.39
RECQL P46063 1/20 0.39
PKM P14618 1/20 0.38
MAPK1 P28482 1/20 0.38
GRIK1 P39086 1/20 0.38
GRIK2 Q13002 1/20 0.38
HSD17B10 Q99714 1/20 0.38
HTT P42858 1/20 0.38
USP2 O75604 1/20 0.37
ALOX15 P16050 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
CYP3A4 P08684 1/20 0.36
CYP2C9 P11712 1/20 0.36
LMNA P02545 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6865409 0.89 ALDH1A1 (0.44) AKR1C3ALDH1A1TSHRKDM4EHPGD
Styrene SCHEMBL10914485 0.79 ALDH1A1 (0.36) AKR1C3ALDH1A1TSHRKDM4EMAPK1
Methacrylic Acid SCHEMBL27910004 0.78 ALDH1A1 (0.39) ALDH1A1HPGD
SCHEMBL1774350 0.77 CYP3A4 (0.53) AKR1C3ALDH1A1TSHRRECQLPKM
Methacrylic Acid SCHEMBL28973688 0.77 PAM (0.42) AKR1C3ALDH1A1HPGDMEN1KMT2A
SCHEMBL9161196 0.76 AKR1C3 (0.50) AKR1C3ALDH1A1TSHRRECQLPKM
Styrene SCHEMBL19970470 0.75 ALDH1A1 (0.62) ALDH1A1TSHRCYP3A4
SCHEMBL8942463 0.74 AKR1C3 (0.41) AKR1C3ALDH1A1TSHRKDM4EHPGD
Styrene SCHEMBL30829607 0.73 ALDH1A1 (0.39) AKR1C3ALDH1A1TSHRRECQLPKM
SCHEMBL27731301 0.73 TDP1 (0.40) AKR1C3ALDH1A1TSHRSMN1; SMN2MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6797451-B2 SEMICONDUCTOR SUBSTRATES; FORMING PHOTORESIST PATTERNS HYNIX SEMICONDUCTOR INC. (KR) 2004-09-28 US claimed
US-20030018150-A1 Reflection-inhibiting resinn used in process for forming photoresist pattern HYNIX SEMICONDUCTOR INC. (KR) 2003-01-23 US claimed
US-6797451-B2 SEMICONDUCTOR SUBSTRATES; FORMING PHOTORESIST PATTERNS HYNIX SEMICONDUCTOR INC. (KR) 2004-09-28 US disclosed
US-20030018150-A1 Reflection-inhibiting resinn used in process for forming photoresist pattern HYNIX SEMICONDUCTOR INC. (KR) 2003-01-23 US disclosed