SCHEMBL6865409

SCHEMBL6865409

CC(=Cc1ccccc1)CC1CO1

nearest known ligand 0.45

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.44
TSHR P16473 2/20 0.44
USP2 O75604 1/20 0.43
ALOX15 P16050 1/20 0.43
SMN1; SMN2 Q16637 1/20 0.43
KDM1A O60341 3/20 0.42
AKR1C3 P42330 1/20 0.40
RECQL P46063 1/20 0.39
TDP1 Q9NUW8 2/20 0.38
PKM P14618 1/20 0.38
MAPK1 P28482 1/20 0.38
GRIK1 P39086 1/20 0.38
GRIK2 Q13002 1/20 0.38
KDM4E B2RXH2 3/20 0.38
FBP1 P09467 1/20 0.37
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
HPGD P15428 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Methacrylic Acid SCHEMBL6862971 0.89 AKR1C3 (0.44) ALDH1A1TSHRUSP2ALOX15SMN1; SMN2
SCHEMBL4156118 0.77 TDP1 (0.41) ALDH1A1TSHRKDM1ATDP1MEN1
SCHEMBL1774350 0.76 CYP3A4 (0.53) ALDH1A1TSHRSMN1; SMN2AKR1C3RECQL
SCHEMBL30688967 0.76 ALDH1A1 (0.39) ALDH1A1TSHRUSP2ALOX15SMN1; SMN2
SCHEMBL9161196 0.76 AKR1C3 (0.50) ALDH1A1TSHRSMN1; SMN2AKR1C3RECQL
SCHEMBL12989483 0.75 ALDH1A1 (0.44) ALDH1A1TSHRUSP2ALOX15SMN1; SMN2
SCHEMBL5992467 0.73 LMNA (0.37) ALDH1A1TSHRSMN1; SMN2KDM1AAKR1C3
SCHEMBL7759579 0.73 AKR1C3 (0.51) ALDH1A1SMN1; SMN2AKR1C3PKMMAPK1
SCHEMBL3194430 0.72 CYP3A4 (0.41) ALDH1A1SMN1; SMN2RECQLPKMMAPK1
SCHEMBL11229855 0.70 MGLL (0.36) ALDH1A1TSHRSMN1; SMN2KDM1ATDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6797451-B2 SEMICONDUCTOR SUBSTRATES; FORMING PHOTORESIST PATTERNS HYNIX SEMICONDUCTOR INC. (KR) 2004-09-28 US claimed
US-20030018150-A1 Reflection-inhibiting resinn used in process for forming photoresist pattern HYNIX SEMICONDUCTOR INC. (KR) 2003-01-23 US claimed
CN-118020026-A Photosensitive resin composition, cured product, partition wall, organic electroluminescent element, and image display device 三菱化学株式会社 2024-05-10 CN disclosed
US-6797451-B2 SEMICONDUCTOR SUBSTRATES; FORMING PHOTORESIST PATTERNS HYNIX SEMICONDUCTOR INC. (KR) 2004-09-28 US disclosed
US-20030018150-A1 Reflection-inhibiting resinn used in process for forming photoresist pattern HYNIX SEMICONDUCTOR INC. (KR) 2003-01-23 US disclosed