Methacrylic Acid

Methacrylic Acid

SCHEMBL6865018

C=C(C)C(=O)O.O=C(O)C1C2CC3CC(C2)CC1C3

nearest known ligand 0.39

Full drug profile on Sugi Atlas →

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 2/20 0.38
MAPT P10636 1/20 0.35
POLB P06746 2/20 0.32
TDP1 Q9NUW8 2/20 0.32
APEX1 P27695 1/20 0.32
CYP2C9 P11712 1/20 0.32
EPHX2 P34913 2/20 0.32
L3MBTL1 Q9Y468 2/20 0.32
LMNA P02545 1/20 0.31
HTT P42858 1/20 0.31
HSD17B10 Q99714 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Adamantane SCHEMBL131439 0.84 TDP1 (0.38) HSD11B1MAPTTDP1CYP2C9EPHX2
Adamantane SCHEMBL21924976 0.84 TDP1 (0.38) HSD11B1MAPTTDP1CYP2C9EPHX2
Adamantane SCHEMBL22115918 0.84 TDP1 (0.38) HSD11B1MAPTTDP1CYP2C9EPHX2
SCHEMBL160953 0.84 HSD11B1 (0.48) HSD11B1POLBTDP1APEX1CYP2C9
SCHEMBL19859959 0.84 HSD11B1 (0.48) HSD11B1POLBTDP1APEX1CYP2C9
SCHEMBL16698251 0.84 HSD11B1 (0.48) HSD11B1POLBTDP1APEX1CYP2C9
SCHEMBL31349739 0.82 HSD11B1 (0.46) HSD11B1POLBTDP1APEX1CYP2C9
SCHEMBL28134787 0.82 HSD11B1 (0.46) HSD11B1POLBTDP1APEX1CYP2C9
Hydrochloric Acid SCHEMBL3051989 0.82 HSD11B1 (0.46) HSD11B1POLBTDP1APEX1CYP2C9
SCHEMBL27917064 0.82 HSD11B1 (0.46) HSD11B1POLBTDP1APEX1CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040058279-A1 Pattern formation material, pattern formation method, and exposure mask fabrication method KABUSHIKI KAISHA TOSHIBA 2004-03-25 US disclosed
US-6660455-B2 Alkali-soluble resin, photoacid generator, and dissolution inhibiting groups, increasing the sensitivity of the pattern formation material KABUSHIKI KAISHA TOSHIBA (JP) 2003-12-09 US disclosed
US-20010026895-A1 Pattern formation material, pattern formation method, and exposure mask fabrication method KABUSHIKI KAISHA TOSHIBA 2001-10-04 US disclosed