SCHEMBL6865965

SCHEMBL6865965

CCNC(=O)OCc1ccccc1[N+](=O)[O-]

nearest known ligand 0.51

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
MAOB P27338 1/20 0.51
ALDH1A1 P00352 6/20 0.49
NPC1 O15118 3/20 0.49
RAB9A P51151 3/20 0.49
SMN1; SMN2 Q16637 3/20 0.49
MEN1 O00255 2/20 0.49
KMT2A Q03164 2/20 0.49
CYP2C19 P33261 2/20 0.47
POLB P06746 1/20 0.47
CYP3A4 P08684 1/20 0.46
CYP2D6 P10635 1/20 0.46
HTT P42858 1/20 0.46
TSHR P16473 1/20 0.45
L3MBTL1 Q9Y468 1/20 0.45
PTPN1 P18031 1/20 0.44
LMNA P02545 1/20 0.44
KDM4A O75164 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1057908 0.89 MAOB (0.49) MAOBALDH1A1NPC1RAB9ASMN1; SMN2
SCHEMBL14962141 0.88 MAOB (0.50) MAOBALDH1A1NPC1RAB9ASMN1; SMN2
SCHEMBL6121074 0.87 NPC1 (0.53) MAOBALDH1A1NPC1RAB9ASMN1; SMN2
SCHEMBL19748646 0.86 MAOB (0.49) MAOBALDH1A1NPC1RAB9ASMN1; SMN2
SCHEMBL11051859 0.86 MAOB (0.49) MAOBALDH1A1NPC1RAB9ASMN1; SMN2
SCHEMBL11964039 0.86 ALDH1A1 (0.49) MAOBALDH1A1NPC1RAB9ASMN1; SMN2
SCHEMBL31496023 0.85 MAOB (0.53) MAOBALDH1A1NPC1RAB9ASMN1; SMN2
SCHEMBL12089304 0.85 MAOB (0.53) MAOBALDH1A1NPC1RAB9ASMN1; SMN2
SCHEMBL793834 0.84 ALDH1A1 (0.47) MAOBALDH1A1NPC1RAB9ASMN1; SMN2
SCHEMBL9782583 0.84 ALDH1A1 (0.48) MAOBALDH1A1NPC1RAB9ASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160359115-A1 WIRING PATTERN PRODUCTION METHOD AND TRANSISTOR PRODUCTION METHOD NIKON CORPORATION (JP) 2016-12-08 US disclosed
US-6815142-B1 Method for forming resist pattern, and overlying layer material and semiconductor device used for forming resist pattern RENESAS TECHNOLOGY CORP. (JP) 2004-11-09 US disclosed
US-6180320-B1 Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2001-01-30 US disclosed