SCHEMBL686727

SCHEMBL686727

CCc1nc(O)c2nccnc2n1

nearest known ligand 0.38

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
PDE4A P27815 1/20 0.38
PDE4B Q07343 1/20 0.38
PDE4C Q08493 1/20 0.38
PDE4D Q08499 1/20 0.38
PDE3B Q13370 1/20 0.38
PDE3A Q14432 1/20 0.38
ADORA2A P29274 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12014823 0.78 PDE4A (0.36) PDE4APDE4BPDE4CPDE4DPDE3B
SCHEMBL24995611 0.74 PDE4A (0.34) PDE4APDE4BPDE4CPDE4DPDE3B
SCHEMBL30570890 0.74 ADORA2A (0.38) ADORA2A
SCHEMBL687166 0.74 ADORA2A (0.38) ADORA2A
SCHEMBL30361253 0.73 ADORA2A (0.40) ADORA2A
SCHEMBL321932 0.73 ADORA2A (0.40) ADORA2A
SCHEMBL12619547 0.72 ALDH1A1 (0.44) PDE4APDE4BPDE4CPDE4DPDE3B
Pterine SCHEMBL4364328 0.69 ADORA2A (0.63) ADORA2A
SCHEMBL9679869 0.69 ADORA2A (0.38) ADORA2A
SCHEMBL16145777 0.67 ALDH1A1 (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109557764-B Chemically amplified positive photosensitive resin composition, resist pattern, method for forming the same, and electronic device 奇美实业股份有限公司 2023-09-12 CN disclosed
CN-104423170-B Photosensitive polysiloxane composition, protective film and assembly with protective film 奇美实业股份有限公司 2019-05-24 CN disclosed
CN-109557764-A Chemically amplified positive photosensitive resin composition, resist pattern and method for forming the same, and electronic device 奇美实业股份有限公司 2019-04-02 CN disclosed
CN-106933034-A Positive light anti-etching agent composition 东京应化工业株式会社 2017-07-07 CN disclosed
US-9389509-B2 Photosensitive polysiloxane composition, protecting film and element having the protecting film CHI MEI CORPORATION (TW) 2016-07-12 US disclosed
US-20150346601-A1 PHOTOSENSITIVE POLYSILOXANE COMPOSITION, PROTECTIVE FILM AND ELEMENT HAVING THE PROTECTIVE FILM CHI MEI CORPORATION (TW) 2015-12-03 US disclosed
US-20150234275-A1 PHOTOSENSITIVE POLYSILOXANE COMPOSITION, PROTECTING FILM AND ELEMENT HAVING THE PROTECTING FILM CHI MEI CORPORATION (TW) 2015-08-20 US disclosed
CN-104849962-A Photosensitive polysiloxane composition, protective film and element with protective film CHI MEI CORP 2015-08-19 CN disclosed
CN-104423170-A Photosensitive polysiloxane composition, protective film and assembly with protective film CHI MEI CORP 2015-03-18 CN disclosed
US-20140322651-A1 PHOTOSENSITIVE POLYSILOXANE COMPOSITION, PROTECTING FILM AND ELEMENT HAVING THE PROTECTING FILM CHI MEI CORPORATION (TW) 2014-10-30 US disclosed
CN-1823108-A Positive photoresist composition and method of forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2006-08-23 CN disclosed
CN-1823107-A positive photoresist and method of forming photoresist TOKYO OHKA KOGYO CO LTD (JP) 2006-08-23 CN disclosed
US-20060183048-A1 Positive photoresist composition and resist pattern formation TOKYO OHKA KOGYO CO., LTD. (JP) 2006-08-17 US disclosed
US-20060166131-A1 Positive photoresist composition and method of forming resist pattern TOKYO OHKA KOGYO, CO., LTD. (JP) 2006-07-27 US disclosed
EP-1664928-A2 POSITIVE PHOTORESIST COMPOSITION AND RESIST PATTERN FORMATION TOKYO OHKA KOGYO CO., LTD. (JP) 2006-06-07 EP disclosed
EP-1644426-A1 POSITIVE PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-12 EP disclosed
EP-1644427-A2 POSITIVE PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-12 EP disclosed
WO-2005029184-A2 POSITIVE PHOTORESIST COMPOSITION AND RESIST PATTERN FORMATION TOKYO OHKA KOGYO CO., LTD. (JP) 2005-03-31 WO disclosed
WO-2005007718-A1 POSITIVE PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2005-01-27 WO disclosed
WO-2005007719-A2 POSITIVE PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2005-01-27 WO disclosed