Nitric Oxide

Nitric Oxide

SCHEMBL6890944

[Cr].[N]=O

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

GUCY1A1GUCY1A2GUCY1B1GUCY1B2

The experimentally established mechanism targets of Nitric Oxide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Nitric Oxide SCHEMBL29482770 0.89
Nitric Oxide SCHEMBL7560 0.87
Nitric Oxide SCHEMBL3993955 0.87
Nitric Oxide SCHEMBL306589 0.75
Nitric Oxide SCHEMBL2731176 0.75
Nitric Oxide SCHEMBL2888647 0.75
Nitric Oxide SCHEMBL7184108 0.75
Nitric Oxide SCHEMBL3636459 0.75
Nitric Oxide SCHEMBL37670 0.75
Nitric Oxide SCHEMBL5104249 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112666789-B Attenuation type high-uniformity phase shift photomask blank and preparation method thereof 湖南普照信息材料有限公司 2024-05-24 CN claimed
CN-113608405-A High-precision submicron wafer packaging level photomask substrate and production method thereof 东莞市宏诚光学制品有限公司 2021-11-05 CN claimed
CN-113589639-A High-precision double-sided blue light mask base plate and manufacturing method thereof 东莞市宏诚光学制品有限公司 2021-11-02 CN claimed
CN-112666789-A Attenuation type high-uniformity phase shift photomask blank and preparation method thereof 湖南普照信息材料有限公司 2021-04-16 CN claimed
CN-104201082-A METHOD FOR OPERATING A PULSED ARC SOURCE OERLIKON TRADING AG 2014-12-10 CN claimed
CN-101263575-A Method for operating a pulsed arc source UNAXIS BALZERS AG (CH) 2008-09-10 CN claimed
US-20040066606-A1 Electricity accumulating element NIPPON PAINT CO., LTD. 2004-04-08 US claimed
JP-6138650-A None JP disclosed
CN-222167257-U Double-sided spin-coating chromium plate 东莞市宏诚光学制品有限公司 2024-12-13 CN disclosed
CN-113608405-A High-precision submicron wafer packaging level photomask substrate and production method thereof 东莞市宏诚光学制品有限公司 2021-11-05 CN disclosed
CN-113589639-A High-precision double-sided blue light mask base plate and manufacturing method thereof 东莞市宏诚光学制品有限公司 2021-11-02 CN disclosed
CN-112666789-A Attenuation type high-uniformity phase shift photomask blank and preparation method thereof 湖南普照信息材料有限公司 2021-04-16 CN disclosed
US-10831057-B2 Color filter substrate, display panel and manufacturing method thereof, and display device BOE TECHNOLOGY GROUP CO., LTD. (CN) 2020-11-10 US disclosed
CN-102782422-B Optically active multilayer system for solar absorption ALMECO TINOX GMBH 2014-09-17 CN disclosed
CN-103616795-A Strong acid resistant photomask and production method thereof OMNISUN INFORMATION MATERIALS CO LTD 2014-03-05 CN disclosed
CN-102782422-A Optically active multilayer system for solar absorption ALMECO TINOX GMBH 2012-11-14 CN disclosed
CN-101424873-A Photo mask using soda-lime glass as substrate and method for manufacturing same HUNAN OMNISUN INFORMATION MATE (CN) 2009-05-06 CN disclosed
CN-101263575-A Method for operating a pulsed arc source UNAXIS BALZERS AG (CH) 2008-09-10 CN disclosed
US-20040066606-A1 Electricity accumulating element NIPPON PAINT CO., LTD. 2004-04-08 US disclosed
JP-H06138650-A PHOTOMASK BLANK AND PRODUCTION OF PHOTOMASK TOPPAN PRINTING CO LTD 1994-05-20 JP disclosed