SCHEMBL6901718

SCHEMBL6901718

COC12CC3CC(C1)CC(OC)(C3)C2

nearest known ligand 0.50

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 1/20 0.39
DPP4 P27487 1/20 0.34
GRIN2D O15399 4/20 0.32
GRIN3B O60391 4/20 0.32
GRIN1 Q05586 4/20 0.32
GRIN2A Q12879 4/20 0.32
GRIN2B Q13224 4/20 0.32
GRIN2C Q14957 4/20 0.32
GRIN3A Q8TCU5 4/20 0.32
TSHR P16473 2/20 0.31
ALDH1A1 P00352 1/20 0.31
LMNA P02545 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
NR1I2 O75469 1/20 0.31
HSD11B1 P28845 1/20 0.31
PKM P14618 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10415070 0.85 TSHR (0.38) NPSR1DPP4GRIN2DGRIN3BGRIN1
SCHEMBL14149404 0.85 GRIN2D (0.33) NPSR1DPP4GRIN2DGRIN3BGRIN1
SCHEMBL14141112 0.84 PKM (0.47) NPSR1DPP4TSHRALDH1A1HSD11B1
SCHEMBL10415069 0.84 NPSR1 (0.33) NPSR1DPP4
SCHEMBL3360868 0.84 GRIN1 (0.48) NPSR1DPP4GRIN2DGRIN3BGRIN1
SCHEMBL727714 0.82 NPSR1 (0.48) NPSR1GRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL25590304 0.80 GRIN2D (0.52) NPSR1DPP4GRIN2DGRIN3BGRIN1
SCHEMBL25509341 0.80 GRIN2D (0.55) NPSR1GRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL11086178 0.79 NPSR1 (0.34) NPSR1DPP4
SCHEMBL14858717 0.79 ALDH1A1 (0.41) DPP4GRIN2DGRIN3BGRIN1GRIN2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180011405-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING RESIST UNDERLAYER FILM, AND COMPOUND FOR RESIST UNDERLAYER FILM COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-11 US disclosed
EP-1258292-B1 Oxidation catalytic system and oxidation process using same DAICEL CHEM (JP) 2004-05-19 EP disclosed
EP-0824962-B1 USE OF AN OXIDATION CATALYST SYSTEM AND PROCESS FOR OXIDATION WITH THE SAME DAICEL CHEM (JP) 2003-05-07 EP disclosed
EP-0858835-B1 Oxidation catalytic system and oxidation process DAICEL CHEM (JP) 2003-05-07 EP disclosed
EP-1258292-A1 Oxidation catalytic system and oxidation process using same DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2002-11-20 EP disclosed
US-5981420-A OXIDATION CATALYSTS SYSTEM CONSISTS OF AN N-HYDROXY OR N-OXY IMIDE COMPOUND AND A TRANSITION METAL COMPOUND EXCLUDING A POLYACID AS COCATALYST DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 1999-11-09 US disclosed
US-5958821-A EPOXIDATION OF AN ALKENE USING A CYCLIC N-HYDROXYIMIDE AND A COCATALYST OF A COMPOUND OF A GROUP 2A OR TRANSITION METAL USING OXYGEN; CATALYST SELECTIVITY; FREE OF PHOSPHO-VANADOMOLYBDIC ACID OR TETRAPHENYLPORPHYRINTOATO MANGANESE DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 1999-09-28 US disclosed
EP-0858835-A1 Oxidation catalytic system and oxidation process Daicel Chemical Industries, Ltd. (JP) 1998-08-19 EP disclosed
EP-0824962-A1 OXIDATION CATALYST SYSTEM AND PROCESS FOR OXIDATION WITH THE SAME DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 1998-02-25 EP disclosed