Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FDPS | P14324 | 2/20 | 0.36 |
| ▸ | LPAR1 | Q92633 | 1/20 | 0.34 |
| ▸ | LPAR3 | Q9UBY5 | 1/20 | 0.34 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.33 |
| ▸ | CES1 | P23141 | 5/20 | 0.31 |
| ▸ | FAAH | O00519 | 3/20 | 0.31 |
| ▸ | CES2 | O00748 | 3/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7896010 | 0.84 | LPAR1 (0.48) | FDPSLPAR1LPAR3EPHX1CES1 | |
| SCHEMBL15216843 | 0.79 | — | — | |
| SCHEMBL15702986 | 0.78 | EPHX1 (0.32) | FDPSALDH1A1L3MBTL1EPHX1 | |
| SCHEMBL16272658 | 0.78 | EPHX1 (0.33) | LPAR1LPAR3EPHX1 | |
| SCHEMBL3871127 | 0.77 | LPAR1 (0.35) | FDPSLPAR1LPAR3ALDH1A1L3MBTL1 | |
| Ammonia Solution, Strong SCHEMBL18008823 | 0.76 | EPHX1 (0.31) | ALDH1A1L3MBTL1EPHX1 | |
| SCHEMBL21136014 | 0.76 | CES1 (0.32) | ALDH1A1L3MBTL1EPHX1CES1 | |
| Sulfuric Acid SCHEMBL5488887 | 0.75 | CES1 (0.34) | FDPSLPAR1LPAR3EPHX1CES1 | |
| Ammonia Solution, Strong SCHEMBL18008280 | 0.75 | LPAR1 (0.34) | FDPSLPAR1LPAR3ALDH1A1L3MBTL1 | |
| SCHEMBL18008964 | 0.75 | EPHX1 (0.31) | ALDH1A1L3MBTL1EPHX1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11703756-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11703757-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-20230205084-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-20190196326-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2019-06-27 | — | — | US | disclosed |
| US-20180149973-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-05-31 | — | — | US | disclosed |
| US-9766541-B2 | Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-09-19 | — | — | US | disclosed |
| US-20170168396-A1 | METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-06-15 | — | — | US | disclosed |
| US-9618845-B2 | Method for forming resist pattern, resist pattern splitting agent, split pattern improving agent, resist pattern splitting material, and positive resist composition for forming split pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9581909-B2 | Method of trimming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-02-28 | — | — | US | disclosed |
| US-20160376233-A1 | POSITIVE-TYPE RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, PHOTO-REACTIVE QUENCHER, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-12-29 | — | — | US | disclosed |
| US-9354515-B2 | Resist composition, acid generator, polymeric compound and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-05-31 | — | — | US | disclosed |
| US-20160097979-A1 | METHOD OF TRIMMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-04-07 | — | — | US | disclosed |
| US-20160091790-A1 | METHOD FOR FORMING RESIST PATTERN, RESIST PATTERN SPLITTING AGENT, SPLIT PATTERN IMPROVING AGENT, RESIST PATTERN SPLITTING MATERIAL, AND POSITIVE RESIST COMPOSITION FOR FORMING SPLIT PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-03-31 | — | — | US | disclosed |
| US-9244347-B2 | Resist composition, compound, polymeric compound and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-01-26 | — | — | US | disclosed |
| US-20150037734-A1 | RESIST COMPOSITION, ACID GENERATOR, POLYMERIC COMPOUND AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-02-05 | — | — | US | disclosed |
| US-20140356787-A1 | RESIST COMPOSITION, COMPOUND, POLYMERIC COMPOUND AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-12-04 | — | — | US | disclosed |
| US-6737459-B2 | COMPRISING A RECOVERED POLYSTYRENE RESIN FROM WASTE RECYCLING, AND A FLAME RETARDATION REAGENT | GENERAL ELECTRIC COMPANY | 2004-05-18 | — | — | US | disclosed |
| US-20030119953-A1 | Polyphenylene ether group resin composite and methods of making articles | CITIBANK, N.A., AS COLLATERAL AGENT | 2003-06-26 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20190196326-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE | RER1, ACTR5, RAD51 | FDPS 1760/4885LPAR1 2590/4885LPAR3 3510/4885 |
| US-20160376233-A1 | POSITIVE-TYPE RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, PHOTO-REACTIVE QUENCHER, AND POLYMERIC COMPOUND | RB1, RPL22, RPS21 | FDPS 4530/4885LPAR1 272/4885LPAR3 816/4885 |
| US-20180149973-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATOR | MCM4, RFC4, ATP1A4 | FDPS 3408/4885LPAR1 997/4885LPAR3 1703/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.