SCHEMBL702066

SCHEMBL702066

CC(Oc1ccccc1)(Oc1ccccc1)[SiH2]CC[SiH2]C(C)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.37
RIPK1 Q13546 1/20 0.36
PPARG P37231 5/20 0.35
LTA4H P09960 3/20 0.35
TSHR P16473 1/20 0.35
KCNA3 P22001 1/20 0.34
PPARA Q07869 2/20 0.33
MAPK1 P28482 1/20 0.33
CYP2D6 P10635 1/20 0.33
LMNA P02545 1/20 0.32
HTR1D P28221 1/20 0.32
HTR1B P28222 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706555 0.92 KCNA3 (0.37) CA4RIPK1PPARGLTA4HTSHR
SCHEMBL705627 0.92 KCNA3 (0.37) CA4RIPK1PPARGLTA4HTSHR
SCHEMBL705201 0.87 CA4 (0.37) CA4RIPK1PPARGLTA4HTSHR
SCHEMBL705986 0.75 LTA4H (0.35) CA4RIPK1PPARGLTA4HTSHR
SCHEMBL703810 0.74 CA4 (0.37) CA4RIPK1PPARGLTA4HTSHR
SCHEMBL4224012 0.71 CA4 (0.48) CA4RIPK1PPARGLTA4HTSHR
SCHEMBL10405698 0.71 CA4 (0.48) CA4RIPK1PPARGLTA4HTSHR
SCHEMBL93074 0.71 CA4 (0.48) CA4RIPK1PPARGLTA4HTSHR
SCHEMBL1660600 0.71 CA4 (0.48) CA4RIPK1PPARGLTA4HTSHR
Phosphine SCHEMBL20897416 0.69 CA4 (0.46) CA4RIPK1PPARGLTA4HTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed