SCHEMBL703810

SCHEMBL703810

CC(Oc1ccccc1)(Oc1ccccc1)[SiH2]c1ccc([SiH2]C(C)(Oc2ccccc2)Oc2ccccc2)cc1

nearest known ligand 0.37

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.37
LTA4H P09960 2/20 0.35
TSHR P16473 1/20 0.35
MAPK1 P28482 1/20 0.33
RIPK1 Q13546 1/20 0.32
PPARG P37231 3/20 0.32
ALDH1A1 P00352 1/20 0.31
ALOX15 P16050 1/20 0.31
PPARA Q07869 2/20 0.31
ATM Q13315 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
CHRNB2 P17787 1/20 0.31
CHRNB4 P30926 1/20 0.31
CHRNA3 P32297 1/20 0.31
CHRNA7 P36544 1/20 0.31
CHRNA4 P43681 1/20 0.31
KCNA3 P22001 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702066 0.74 CA4 (0.37) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL705201 0.74 CA4 (0.37) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL707992 0.74 CHRNB2 (0.35) CA4LTA4HTSHRRIPK1PPARG
SCHEMBL3063901 0.73 MAPK1 (0.36) CA4LTA4HMAPK1ALDH1A1ALOX15
SCHEMBL3521242 0.71 CA4 (0.39) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL706555 0.71 KCNA3 (0.37) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL705627 0.71 KCNA3 (0.37) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL4224012 0.71 CA4 (0.48) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL93074 0.71 CA4 (0.48) CA4LTA4HTSHRMAPK1RIPK1
SCHEMBL1660600 0.71 CA4 (0.48) CA4LTA4HTSHRMAPK1RIPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed