SCHEMBL706555

SCHEMBL706555

CC(Oc1ccccc1)(Oc1ccccc1)[SiH2]CCC[SiH2]C(C)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
KCNA3 P22001 1/20 0.37
CA4 P22748 1/20 0.34
RIPK1 Q13546 1/20 0.34
PPARG P37231 4/20 0.34
LTA4H P09960 4/20 0.33
HTR1B P28222 1/20 0.33
PPARA Q07869 2/20 0.33
TSHR P16473 1/20 0.32
MAPK1 P28482 1/20 0.31
CYP2D6 P10635 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705627 0.96 KCNA3 (0.37) KCNA3CA4RIPK1PPARGLTA4H
SCHEMBL702066 0.92 CA4 (0.37) KCNA3CA4RIPK1PPARGLTA4H
SCHEMBL705201 0.83 CA4 (0.37) KCNA3CA4RIPK1PPARGLTA4H
SCHEMBL702540 0.77 LTA4H (0.35) KCNA3CA4PPARGLTA4HHTR1B
SCHEMBL705262 0.73 LTA4H (0.35) KCNA3CA4PPARGLTA4HHTR1B
SCHEMBL703810 0.71 CA4 (0.37) KCNA3CA4RIPK1PPARGLTA4H
SCHEMBL705986 0.68 LTA4H (0.35) KCNA3CA4RIPK1PPARGLTA4H
SCHEMBL93074 0.68 CA4 (0.48) KCNA3CA4RIPK1PPARGLTA4H
SCHEMBL4224012 0.68 CA4 (0.48) KCNA3CA4RIPK1PPARGLTA4H
SCHEMBL1660600 0.68 CA4 (0.48) KCNA3CA4RIPK1PPARGLTA4H

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed