SCHEMBL702249

SCHEMBL702249

CCCCO[SiH](CCCCc1ccccc1)OCCCC

nearest known ligand 0.55

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 1/20 0.45
SIGMAR1 Q99720 2/20 0.42
IDO1 P14902 1/20 0.42
L3MBTL1 Q9Y468 2/20 0.41
TDP1 Q9NUW8 1/20 0.41
MAOA P21397 1/20 0.40
MEN1 O00255 1/20 0.40
NPC1 O15118 1/20 0.40
RAB9A P51151 1/20 0.40
KMT2A Q03164 1/20 0.40
HTR2A P28223 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706282 0.95 IDO1 (0.43) KCNH2SIGMAR1IDO1MEN1NPC1
SCHEMBL706756 0.92 SIGMAR1 (0.44) KCNH2SIGMAR1IDO1L3MBTL1MAOA
SCHEMBL19470864 0.90 SIGMAR1 (0.46) KCNH2SIGMAR1IDO1L3MBTL1TDP1
SCHEMBL19470826 0.90 SIGMAR1 (0.46) KCNH2SIGMAR1IDO1L3MBTL1TDP1
SCHEMBL19470877 0.90 SIGMAR1 (0.46) KCNH2SIGMAR1IDO1L3MBTL1TDP1
SCHEMBL19470872 0.90 SIGMAR1 (0.46) KCNH2SIGMAR1IDO1L3MBTL1TDP1
SCHEMBL19470819 0.90 SIGMAR1 (0.46) KCNH2SIGMAR1IDO1L3MBTL1TDP1
SCHEMBL20483785 0.90 SIGMAR1 (0.46) KCNH2SIGMAR1IDO1L3MBTL1TDP1
SCHEMBL20483520 0.90 SIGMAR1 (0.46) KCNH2SIGMAR1IDO1L3MBTL1TDP1
SCHEMBL19470841 0.90 SIGMAR1 (0.46) KCNH2SIGMAR1IDO1L3MBTL1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed