SCHEMBL706282

SCHEMBL706282

CCCCO[SiH](CCCc1ccccc1)OCCCC

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 1/20 0.43
KCNH2 Q12809 2/20 0.42
SIGMAR1 Q99720 2/20 0.42
CHRM2 P08172 1/20 0.41
HTR1A P08908 1/20 0.41
ADRA2A P08913 1/20 0.41
CHRM1 P11229 1/20 0.41
DRD1 P21728 1/20 0.41
SLC6A2 P23975 1/20 0.41
SLC6A4 P31645 1/20 0.41
ADRA1A P35348 1/20 0.41
OPRM1 P35372 1/20 0.41
DRD3 P35462 1/20 0.41
SLC6A3 Q01959 1/20 0.41
LTA4H P09960 1/20 0.41
MEN1 O00255 1/20 0.40
NPC1 O15118 1/20 0.40
RAB9A P51151 1/20 0.40
KMT2A Q03164 1/20 0.40
HRH3 Q9Y5N1 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702249 0.95 KCNH2 (0.45) IDO1KCNH2SIGMAR1MEN1NPC1
SCHEMBL706388 0.91 SIGMAR1 (0.43) IDO1KCNH2SIGMAR1CHRM2HTR1A
SCHEMBL702245 0.91 IDO1 (0.44) IDO1KCNH2SIGMAR1CHRM2HTR1A
SCHEMBL706756 0.86 SIGMAR1 (0.44) IDO1KCNH2SIGMAR1CHRM2HTR1A
SCHEMBL21175526 0.85 IDO1 (0.46) IDO1KCNH2SIGMAR1CHRM2HTR1A
SCHEMBL20483520 0.85 SIGMAR1 (0.46) IDO1KCNH2SIGMAR1
SCHEMBL19470819 0.85 SIGMAR1 (0.46) IDO1KCNH2SIGMAR1
SCHEMBL20483785 0.85 SIGMAR1 (0.46) IDO1KCNH2SIGMAR1
SCHEMBL19470872 0.85 SIGMAR1 (0.46) IDO1KCNH2SIGMAR1
SCHEMBL19470826 0.85 SIGMAR1 (0.46) IDO1KCNH2SIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed