SCHEMBL702252

SCHEMBL702252

COc1ccc(S2(OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)CCCC2)c2ccccc12

nearest known ligand 0.39

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.36
NPC1 O15118 1/20 0.33
MAPK1 P28482 3/20 0.32
TSHR P16473 2/20 0.32
HTT P42858 2/20 0.32
KDM4E B2RXH2 2/20 0.32
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
IDO1 P14902 1/20 0.31
FABP4 P15090 8/20 0.31
LMNA P02545 2/20 0.31
EP300 Q09472 1/20 0.31
KAT8 Q9H7Z6 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
SLC2A1 P11166 1/20 0.31
GAA P10253 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704510 0.99 ALDH1A1 (0.35) ALDH1A1NPC1MAPK1TSHRHTT
SCHEMBL3970511 0.89
SCHEMBL3969489 0.89 HTT (0.32) ALDH1A1TSHRHTTLMNA
SCHEMBL3119750 0.88 TSHR (0.42) ALDH1A1TSHRHTTKDM4EMEN1
SCHEMBL3971506 0.88
SCHEMBL3970533 0.88 CA1 (0.32) KDM4E
SCHEMBL3970056 0.88 HTT (0.31) ALDH1A1TSHRHTTLMNA
SCHEMBL3975128 0.88 MEN1 (0.32) ALDH1A1TSHRHTTMEN1KMT2A
SCHEMBL704518 0.87 TSHR (0.41) ALDH1A1TSHRHTTKDM4EMEN1
SCHEMBL36503 0.87 ALDH1A1 (0.39) ALDH1A1NPC1MAPK1IDO1FABP4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8722306-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2014-05-13 US disclosed
US-8691496-B2 Method for forming resist under layer film, pattern forming method and composition for resist under layer film JSR CORPORATION (JP) 2014-04-08 US disclosed
US-8663905-B2 Pattern-forming method JSR CORPORATION (JP) 2014-03-04 US disclosed
US-20130004900-A1 METHOD FOR FORMING RESIST UNDER LAYER FILM, PATTERN FORMING METHOD AND COMPOSITION FOR RESIST UNDER LAYER FILM JSR CORPORATION (JP) 2013-01-03 US disclosed
US-8288073-B2 Pattern forming method JSR CORPORATION (JP) 2012-10-16 US disclosed
US-20120164586-A1 PATERN FORMING METHOD JSR CORPORATION (JP) 2012-06-28 US disclosed
US-8124314-B2 Radiation-sensitive composition JSR CORPORATION (JP) 2012-02-28 US disclosed
US-20100221664-A1 RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
US-20100203452-A1 RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2010-08-12 US disclosed
US-20100178608-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-07-15 US disclosed
EP-1641848-A1 PHOTORESIST POLYMER COMPOSITIONS JSR Corporation (JP) 2006-04-05 EP disclosed
WO-2005003198-A1 PHOTORESIST POLYMER COMPOSITIONS JSR CORPORATION (JP) 2005-01-13 WO disclosed
US-6800419-B2 FOR USE AS CHEMICALLY-AMPLIFIED RESIST FOR MICROFABRICATION UTILIZING DEEP ULTRAVIOLET RAYS AND EXHIBITS EXCELLENT FILM THICKNESS UNIFORMITY AND STORAGE STABILITY JSR CORPORATION (JP) 2004-10-05 US disclosed
US-20040072094-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2004-04-15 US disclosed
US-20040048192-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-03-11 US disclosed
US-20040034155-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR CORPORATION (JP) 2004-02-19 US disclosed
EP-1386904-A1 Acenaphthylene derivative, polymer, and antireflection film-forming composition JSR Corporation (JP) 2004-02-04 EP disclosed
US-20030203309-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-20030203307-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed