Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.39 |
| ▸ | FABP4 | P15090 | 11/20 | 0.36 |
| ▸ | NPC1 | O15118 | 1/20 | 0.36 |
| ▸ | IDO1 | P14902 | 1/20 | 0.35 |
| ▸ | EP300 | Q09472 | 1/20 | 0.34 |
| ▸ | KAT8 | Q9H7Z6 | 1/20 | 0.34 |
| ▸ | CDC25B | P30305 | 1/20 | 0.34 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.34 |
| ▸ | SLC2A1 | P11166 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2521576 | 0.87 | HTT (0.32) | ALDH1A1SLC2A1 | |
| SCHEMBL2521333 | 0.87 | ALDH1A1 (0.31) | ALDH1A1 | |
| SCHEMBL702252 | 0.87 | ALDH1A1 (0.36) | ALDH1A1FABP4NPC1IDO1EP300 | |
| SCHEMBL36663 | 0.87 | TSHR (0.43) | ALDH1A1FABP4SLC2A1 | |
| SCHEMBL2520945 | 0.86 | HTT (0.36) | ALDH1A1FABP4SLC2A1 | |
| SCHEMBL2519985 | 0.86 | KDM4E (0.36) | FABP4NPC1 | |
| SCHEMBL704510 | 0.86 | ALDH1A1 (0.35) | ALDH1A1FABP4NPC1IDO1EP300 | |
| SCHEMBL703653 | 0.85 | KMT2A (0.44) | ALDH1A1FABP4SLC2A1 | |
| SCHEMBL36281 | 0.84 | SLC2A1 (0.41) | FABP4SLC2A1 | |
| SCHEMBL3973457 | 0.83 | FABP4 (0.39) | FABP4NPC1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 319 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2584409-B1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND | TOKYO OHKA KOGYO CO LTD (JP) | 2021-04-28 | — | — | EP | disclosed |
| EP-2060600-B1 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO LTD (JP) | 2017-12-27 | — | — | EP | disclosed |
| EP-2093213-B1 | Positive resist composition and method of forming a resist pattern using the same | TOKYO OHKA KOGYO CO LTD (JP) | 2017-10-04 | — | — | EP | disclosed |
| US-9618842-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9618843-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-04-11 | — | — | US | disclosed |
| US-9494860-B2 | Resist composition, method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-11-15 | — | — | US | disclosed |
| EP-2088466-B1 | Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound | TOKYO OHKA KOGYO CO LTD (JP) | 2016-10-26 | — | — | EP | disclosed |
| EP-2073060-B1 | Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO LTD (JP) | 2016-08-24 | — | — | EP | disclosed |
| US-9250531-B2 | Method of forming resist pattern and negative tone-development resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-02-02 | — | — | US | disclosed |
| US-9244349-B2 | Positive resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-01-26 | — | — | US | disclosed |
| US-6800419-B2 | FOR USE AS CHEMICALLY-AMPLIFIED RESIST FOR MICROFABRICATION UTILIZING DEEP ULTRAVIOLET RAYS AND EXHIBITS EXCELLENT FILM THICKNESS UNIFORMITY AND STORAGE STABILITY | JSR CORPORATION (JP) | 2004-10-05 | — | — | US | disclosed |
| US-20040072094-A1 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2004-04-15 | — | — | US | disclosed |
| US-20040048192-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-03-11 | — | — | US | disclosed |
| US-20040034155-A1 | Acenaphthylene derivative, polymer, and antireflection film-forming composition | JSR CORPORATION (JP) | 2004-02-19 | — | — | US | disclosed |
| EP-1386904-A1 | Acenaphthylene derivative, polymer, and antireflection film-forming composition | JSR Corporation (JP) | 2004-02-04 | — | — | EP | disclosed |
| US-20030203309-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-10-30 | — | — | US | disclosed |
| US-20030203307-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-10-30 | — | — | US | disclosed |
| US-20030157423-A1 | Copolymer, polymer mixture, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-08-21 | — | — | US | disclosed |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| EP-1270553-A2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-01-02 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | ASIC1, PFAS, RARA | ALDH1A1 1216/4885FABP4 257/4885NPC1 1870/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.