SCHEMBL702598

SCHEMBL702598

CCCC[Si](CCC[Si](CCCC)(OC(C)=O)OC(C)=O)(OC(C)=O)OC(C)=O

nearest known ligand 0.43

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.43
FAAH O00519 1/20 0.36
CES1 P23141 3/20 0.34
ACHE P22303 5/20 0.33
CES2 O00748 3/20 0.33
EPHX1 P07099 3/20 0.33
PAOX Q6QHF9 1/20 0.33
LMNA P02545 1/20 0.33
HSD17B10 Q99714 1/20 0.33
TSHR P16473 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703790 0.98 ALDH1A1 (0.44) ALDH1A1FAAHCES1ACHECES2
SCHEMBL704468 0.95 ALDH1A1 (0.43) ALDH1A1FAAHCES1ACHECES2
SCHEMBL707212 0.95 ALDH1A1 (0.43) ALDH1A1FAAHCES1ACHECES2
SCHEMBL704159 0.91 ALDH1A1 (0.38) ALDH1A1FAAHCES1PAOXLMNA
SCHEMBL713401 0.89 ALDH1A1 (0.41) ALDH1A1FAAHCES1ACHECES2
SCHEMBL7054815 0.89 FAAH (0.43) ALDH1A1FAAHCES1CES2EPHX1
SCHEMBL706745 0.86 ALDH1A1 (0.38) ALDH1A1FAAHCES1PAOXLMNA
SCHEMBL701705 0.84 ALDH1A1 (0.35) ALDH1A1PAOXLMNAHSD17B10
SCHEMBL706130 0.83 ALDH1A1 (0.38) ALDH1A1FAAHPAOXLMNAHSD17B10
SCHEMBL704795 0.82 ALDH1A1 (0.43) ALDH1A1FAAHCES1ACHECES2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed