SCHEMBL704159

SCHEMBL704159

CCC[Si](CCC[Si](CCC)(OC(C)=O)OC(C)=O)(OC(C)=O)OC(C)=O

nearest known ligand 0.38

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.38
PAOX Q6QHF9 3/20 0.33
LMNA P02545 1/20 0.33
HSD17B10 Q99714 1/20 0.33
FAAH O00519 1/20 0.32
KDM4E B2RXH2 1/20 0.31
MAPK1 P28482 1/20 0.31
HIF1A Q16665 1/20 0.31
CES1 P23141 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706745 0.95 ALDH1A1 (0.38) ALDH1A1PAOXLMNAHSD17B10FAAH
SCHEMBL706130 0.93 ALDH1A1 (0.38) ALDH1A1PAOXLMNAHSD17B10FAAH
SCHEMBL702598 0.91 ALDH1A1 (0.43) ALDH1A1PAOXLMNAHSD17B10FAAH
SCHEMBL704985 0.91 ALDH1A1 (0.36) ALDH1A1PAOXLMNAHSD17B10FAAH
SCHEMBL703790 0.88 ALDH1A1 (0.44) ALDH1A1PAOXLMNAHSD17B10FAAH
SCHEMBL704468 0.86 ALDH1A1 (0.43) ALDH1A1PAOXLMNAHSD17B10FAAH
SCHEMBL707212 0.86 ALDH1A1 (0.43) ALDH1A1PAOXLMNAHSD17B10FAAH
SCHEMBL7054815 0.84 FAAH (0.43) ALDH1A1HSD17B10FAAHCES1
SCHEMBL701705 0.84 ALDH1A1 (0.35) ALDH1A1PAOXLMNAHSD17B10KDM4E
SCHEMBL705613 0.84 ALDH1A1 (0.35) ALDH1A1PAOXLMNAHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed