Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.35 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.35 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.32 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL706117 | 0.95 | KDM4E (0.35) | KDM4EMAPK1HIF1AALDH1A1HSD17B10 | |
| SCHEMBL703725 | 0.89 | ALDH1A1 (0.35) | KDM4EMAPK1HIF1AALDH1A1HSD17B10 | |
| SCHEMBL18496517 | 0.89 | FAAH (0.42) | ALDH1A1HSD17B10TDP1TSHR | |
| SCHEMBL5702358 | 0.89 | FAAH (0.42) | ALDH1A1HSD17B10TDP1TSHR | |
| SCHEMBL3792898 | 0.89 | FAAH (0.42) | ALDH1A1HSD17B10TDP1TSHR | |
| SCHEMBL27743561 | 0.88 | KDM4E (0.31) | KDM4EMAPK1HIF1A | |
| SCHEMBL7633540 | 0.86 | PAOX (0.42) | KDM4EMAPK1HIF1ALMNATSHR | |
| SCHEMBL7980171 | 0.86 | FOLH1 (0.30) | KDM4EMAPK1HIF1A | |
| SCHEMBL3898090 | 0.84 | TSHR (0.38) | ALDH1A1TDP1TSHR | |
| SCHEMBL4450730 | 0.84 | ADRA1A (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |