SCHEMBL703383

SCHEMBL703383

CCCO[SiH](CCC[SiH](OCCC)OCCC)OCCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706691 0.94
SCHEMBL1123036 0.92 TSHR (0.30)
SCHEMBL929339 0.92 TSHR (0.30)
SCHEMBL6706823 0.92 TSHR (0.30)
SCHEMBL6708436 0.92 TSHR (0.30)
SCHEMBL713340 0.92 ADRB2 (0.33)
SCHEMBL6708448 0.92 TSHR (0.30)
SCHEMBL1286895 0.89 TSHR (0.35)
SCHEMBL705839 0.88
SCHEMBL3149894 0.87 THRB (0.40)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4328214-A1 ULTRAVIOLET RAY IRRADIATION DEVICE, AND METHOD FOR PURIFYING ORGANIC COMPOUND Tokuyama Corporation (JP) 2024-02-28 EP disclosed
WO-2022224951-A1 ULTRAVIOLET RAY IRRADIATION DEVICE, AND METHOD FOR PURIFYING ORGANIC COMPOUND 株式会社トクヤマ 2022-10-27 WO disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100233482-A1 Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device HAMADA YOSHITAKA 2010-09-16 US disclosed
US-7754330-B2 Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-13 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20090294922-A1 ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE PANASONIC CORPORATION (JP) 2009-12-03 US disclosed
US-20090294726-A1 ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-03 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed