SCHEMBL703410

SCHEMBL703410

CCOc1ccc2ccc(C3CCCS3)cc2c1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAOA P21397 4/20 0.46
MAOB P27338 4/20 0.46
ABL1 P00519 1/20 0.38
CYP1A2 P05177 2/20 0.38
CA12 O43570 1/20 0.38
CA1 P00915 1/20 0.38
CA4 P22748 1/20 0.38
CA6 P23280 1/20 0.38
CA5A P35218 1/20 0.38
CA7 P43166 1/20 0.38
CA9 Q16790 1/20 0.38
CA14 Q9ULX7 1/20 0.38
CA5B Q9Y2D0 1/20 0.38
AKR1C3 P42330 1/20 0.35
AKR1C2 P52895 1/20 0.35
CYP11B1 P15538 2/20 0.35
CYP11B2 P19099 2/20 0.35
GAA P10253 1/20 0.35
MAPK1 P28482 1/20 0.35
TDP1 Q9NUW8 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL700280 0.90 MAOA (0.48) MAOAMAOBCYP1A2CA12CA1
SCHEMBL701986 0.90 MAOA (0.48) MAOAMAOBCA12CA1CA4
SCHEMBL27639854 0.86 MAOA (0.50) MAOAMAOBCA12CA1CA4
Methane SCHEMBL28755004 0.85 MAOA (0.49) MAOAMAOBCA12CA1CA4
SCHEMBL702892 0.85 CYP1A2 (0.43) MAOACYP1A2CYP11B2MAPK1TSHR
SCHEMBL27639881 0.84 MAOA (0.48) MAOAMAOBCA12CA1CA4
SCHEMBL27639895 0.83 MAOA (0.47) MAOAMAOBCA12CA1CA4
SCHEMBL27621080 0.81 MAOA (0.44) MAOACYP1A2MAPK1KDM4ETSHR
SCHEMBL27639935 0.81 SLC6A2 (0.45) MAOAMAOBSLC6A2SLC6A4HTR3A
SCHEMBL27621168 0.80 PARP10 (0.44) MAOAMAOBSLC6A2SLC6A4HTR3A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2325694-B1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORP (JP) 2017-11-08 EP disclosed
US-20120164586-A1 PATERN FORMING METHOD JSR CORPORATION (JP) 2012-06-28 US disclosed
US-8124314-B2 Radiation-sensitive composition JSR CORPORATION (JP) 2012-02-28 US disclosed
US-20110262865-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER JSR CORPORATION (JP) 2011-10-27 US disclosed
US-20110212401-A1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORPORATION (JP) 2011-09-01 US disclosed
EP-2325694-A1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR Corporation (JP) 2011-05-25 EP disclosed
US-20100221664-A1 RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
US-20100203452-A1 RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2010-08-12 US disclosed