Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR1 | P03372 | 1/20 | 0.32 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.32 |
| ▸ | CALM1 | P0DP23 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.31 |
| ▸ | IDO1 | P14902 | 1/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | NR1H2 | P55055 | 1/20 | 0.30 |
| ▸ | NR1H3 | Q13133 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL704398 | 0.82 | ESR1 (0.32) | ESR1ESR2CALM1ALDH1A1IDO1 | |
| SCHEMBL702836 | 0.78 | TP53 (0.38) | ESR1ESR2ALDH1A1MAPTNR1H2 | |
| SCHEMBL704262 | 0.78 | ALDH1A1 (0.33) | ESR1ESR2ALDH1A1MAPT | |
| SCHEMBL706910 | 0.78 | ALDH1A1 (0.33) | ESR1ESR2ALDH1A1MAPT | |
| SCHEMBL706161 | 0.77 | ESR1 (0.32) | ESR1ESR2CALM1ALDH1A1IDO1 | |
| SCHEMBL707337 | 0.74 | TP53 (0.35) | ESR1ESR2ALDH1A1NR1H2NR1H3 | |
| SCHEMBL707750 | 0.73 | ESR1 (0.44) | ESR1ESR2CALM1ALDH1A1IDO1 | |
| SCHEMBL25470338 | 0.72 | NR1H2 (0.33) | ESR1ESR2NR1H2NR1H3 | |
| SCHEMBL15303034 | 0.72 | ALDH1A1 (0.33) | ALDH1A1NR1H2NR1H3 | |
| SCHEMBL18662212 | 0.72 | HTR2A (0.41) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |