SCHEMBL704262

SCHEMBL704262

F[Si](F)(CCC[Si](F)(F)c1ccccc1)c1ccccc1

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.33
MAPT P10636 1/20 0.33
CYP19A1 P11511 1/20 0.30
ESR1 P03372 1/20 0.30
ESR2 Q92731 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706910 0.95 ALDH1A1 (0.33) ALDH1A1MAPTCYP19A1ESR1ESR2
SCHEMBL704398 0.89 ESR1 (0.32) ALDH1A1MAPTESR1ESR2
SCHEMBL707815 0.86 DNM1 (0.36)
SCHEMBL707337 0.80 TP53 (0.35) ALDH1A1ESR1ESR2
SCHEMBL28370706 0.80 MMP2 (0.38) ESR1ESR2
SCHEMBL708556 0.79 ALDH1A1 (0.33) ALDH1A1MAPTESR1ESR2
SCHEMBL703567 0.78 ESR1 (0.32) ALDH1A1MAPTESR1ESR2
SCHEMBL26454803 0.74 ALDH1A1 (0.43) ALDH1A1
SCHEMBL26454810 0.74 KDM4E (0.44) ALDH1A1
SCHEMBL26454845 0.74 BTN3A1 (0.34) ALDH1A1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed