SCHEMBL7039441

SCHEMBL7039441

NNC(Cc1ccccc1)c1ccccc1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTT P42858 2/20 0.51
L3MBTL1 Q9Y468 2/20 0.51
ALDH1A1 P00352 1/20 0.51
NCOA1 Q15788 1/20 0.51
SMN1; SMN2 Q16637 1/20 0.51
NCOA3 Q9Y6Q9 1/20 0.51
KDM4E B2RXH2 1/20 0.51
NPSR1 Q6W5P4 1/20 0.51
CYP1A2 P05177 1/20 0.50
CYP3A4 P08684 1/20 0.50
CYP2D6 P10635 1/20 0.50
CYP2C9 P11712 1/20 0.50
CYP2C19 P33261 1/20 0.50
MAPT P10636 1/20 0.49
EPHX1 P07099 2/20 0.48
SOAT1 P35610 1/20 0.46
SIGMAR1 Q99720 1/20 0.46
AOC3 Q16853 3/20 0.45
CCR3 P51677 1/20 0.45
MAOA P21397 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18065741 1.00 HTT (0.51) HTTL3MBTL1ALDH1A1NCOA1SMN1; SMN2
SCHEMBL11413367 0.87 SMN1; SMN2 (0.47) HTTL3MBTL1ALDH1A1NCOA1SMN1; SMN2
Hydrochloric Acid SCHEMBL5314703 0.81 MEN1 (0.52) ALDH1A1SMN1; SMN2KDM4ECYP1A2CYP2D6
SCHEMBL10936752 0.80 HTT (0.58) HTTL3MBTL1ALDH1A1NCOA1SMN1; SMN2
SCHEMBL28157913 0.79 KCNH2 (0.47) HTTALDH1A1SMN1; SMN2CYP1A2CYP3A4
SCHEMBL13621571 0.78 TAAR1 (0.57) HTTL3MBTL1ALDH1A1NCOA1SMN1; SMN2
SCHEMBL3511543 0.78 HTT (0.56) HTTL3MBTL1ALDH1A1NCOA1SMN1; SMN2
SCHEMBL1541692 0.78 TAAR1 (0.57) HTTL3MBTL1ALDH1A1NCOA1SMN1; SMN2
SCHEMBL2096552 0.78 HTT (0.51) HTTL3MBTL1ALDH1A1NCOA1SMN1; SMN2
SCHEMBL6932504 0.78 L3MBTL1 (0.57) HTTL3MBTL1ALDH1A1NCOA1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-RE38613-E1 Method for growing a nitride compound semiconductor SONY CORPORATION (JP) 2004-10-05 US claimed
US-6043140-A VAPOR DEPOSITION METHODS USING A NITROGEN SOURCE MATERIAL WHICH DOES NOT RELEASE HYDROGEN DURING RELEASE OF NITROGEN COMPRISING A SEC. OR TERT. AMINE, AN AZO COMPOUND, AN AZIDE OR AN ALKYL- AND PHENYL-SUBSTITUTED HYDRAZINE SONY CORPORATION (JP) 2000-03-28 US claimed