SCHEMBL704018

SCHEMBL704018

CCCC(O[SiH2]CC[SiH2]OC(CCC)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.35
LMNA P02545 3/20 0.35
SCN1A P35498 3/20 0.35
SCN2A Q99250 3/20 0.35
SCN3A Q9NY46 3/20 0.35
CYP1A2 P05177 2/20 0.35
CYP3A4 P08684 2/20 0.35
CYP2D6 P10635 2/20 0.35
CYP2C9 P11712 2/20 0.35
CYP2C19 P33261 2/20 0.35
SIGMAR1 Q99720 2/20 0.35
TSHR P16473 1/20 0.35
NFKB1 P19838 1/20 0.35
MTOR P42345 1/20 0.35
RAB9A P51151 1/20 0.35
MAPK1 P28482 1/20 0.34
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
KDM4E B2RXH2 1/20 0.34
NR1I2 O75469 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4265415 0.94 LMNA (0.36) KCNN4LMNASCN1ASCN2ASCN3A
SCHEMBL706316 0.93 LMNA (0.33) KCNN4LMNASCN1ASCN2ASCN3A
SCHEMBL707444 0.93 LMNA (0.33) KCNN4LMNASCN1ASCN2ASCN3A
SCHEMBL706465 0.92 KCNN4 (0.35) KCNN4LMNASCN1ASCN2ASCN3A
SCHEMBL4266488 0.91 KCNN4 (0.34) KCNN4LMNASCN1ASCN2ASCN3A
SCHEMBL4275846 0.85 KCNN4 (0.35) KCNN4LMNASCN1ASCN2ASCN3A
SCHEMBL704048 0.84 KCNN4 (0.38) KCNN4LMNACYP2C19MAPK1TAAR1
SCHEMBL708048 0.83 KCNN4 (0.34) KCNN4LMNASCN1ASCN2ASCN3A
SCHEMBL4266012 0.81 LMNA (0.37) KCNN4LMNACYP1A2CYP3A4CYP2D6
SCHEMBL5614716 0.79 KCNN4 (0.40) KCNN4LMNASCN1ASCN2ASCN3A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed