SCHEMBL707444

SCHEMBL707444

CCCC(O[SiH2]CCCC[SiH2]OC(CCC)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 3/20 0.33
SCN1A P35498 3/20 0.33
SCN2A Q99250 3/20 0.33
SCN3A Q9NY46 3/20 0.33
CYP1A2 P05177 2/20 0.33
CYP3A4 P08684 2/20 0.33
CYP2D6 P10635 2/20 0.33
CYP2C9 P11712 2/20 0.33
CYP2C19 P33261 2/20 0.33
SIGMAR1 Q99720 2/20 0.33
TSHR P16473 1/20 0.33
NFKB1 P19838 1/20 0.33
MTOR P42345 1/20 0.33
RAB9A P51151 1/20 0.33
KCNN4 O15554 1/20 0.33
KDM4E B2RXH2 1/20 0.33
MEN1 O00255 1/20 0.33
NR1I2 O75469 1/20 0.33
CYP1A1 P04798 1/20 0.33
CYP2E1 P05181 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706316 0.96 LMNA (0.33) LMNASCN1ASCN2ASCN3ACYP1A2
SCHEMBL704018 0.93 KCNN4 (0.35) LMNASCN1ASCN2ASCN3ACYP1A2
SCHEMBL4265415 0.91 LMNA (0.36) LMNASCN1ASCN2ASCN3ACYP1A2
SCHEMBL706465 0.89 KCNN4 (0.35) LMNASCN1ASCN2ASCN3ACYP1A2
SCHEMBL4266488 0.87 KCNN4 (0.34) LMNASCN1ASCN2ASCN3ACYP1A2
SCHEMBL4275846 0.85 KCNN4 (0.35) LMNASCN1ASCN2ASCN3ACYP1A2
SCHEMBL704100 0.85 KCNN4 (0.35) LMNACYP3A4CYP2D6SIGMAR1KCNN4
SCHEMBL707299 0.81 KCNN4 (0.35) LMNACYP3A4CYP2D6SIGMAR1KCNN4
SCHEMBL708048 0.80 KCNN4 (0.34) LMNASCN1ASCN2ASCN3ACYP1A2
SCHEMBL4266012 0.78 LMNA (0.37) LMNACYP1A2CYP3A4CYP2D6CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed