SCHEMBL704394

SCHEMBL704394

CCCC[SiH](OC(C)=O)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
PTGS2 P35354 5/20 0.39
TSHR P16473 4/20 0.38
CES2 O00748 3/20 0.38
CES1 P23141 3/20 0.38
TDP1 Q9NUW8 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
ALDH1A1 P00352 2/20 0.37
TP53 P04637 1/20 0.37
CYP3A4 P08684 1/20 0.37
MAPK1 P28482 1/20 0.37
LMNA P02545 1/20 0.36
CETP P11597 3/20 0.36
KDM4E B2RXH2 1/20 0.36
MEN1 O00255 1/20 0.36
RECQL P46063 1/20 0.36
KMT2A Q03164 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704565 0.82 ALDH1A1 (0.41) PTGS2TSHRCES2CES1TDP1
SCHEMBL705849 0.77 LTA4H (0.37) PTGS2TSHRCES2CES1TDP1
SCHEMBL16243043 0.75 LTA4H (0.36) PTGS2TSHRCES2CES1TDP1
SCHEMBL706041 0.75 LTA4H (0.36) PTGS2CES2CES1TDP1ALDH1A1
SCHEMBL705395 0.74 LTA4H (0.43) ALDH1A1CYP3A4MAPK1LMNA
SCHEMBL704443 0.74 LTA4H (0.39) TSHRTDP1L3MBTL1ALDH1A1TP53
SCHEMBL706087 0.74 LTA4H (0.43) TSHRTDP1L3MBTL1ALDH1A1TP53
SCHEMBL703151 0.72 LTA4H (0.34) PTGS2TSHRALDH1A1TP53CYP3A4
SCHEMBL705081 0.72 LTA4H (0.34) PTGS2CES2CES1TP53MAPK1
SCHEMBL2711943 0.72 ALDH1A1 (0.43) PTGS2TSHRCES2CES1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed