SCHEMBL704565

SCHEMBL704565

CC[SiH](OC(C)=O)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.41
CES2 O00748 5/20 0.36
CES1 P23141 5/20 0.36
TSHR P16473 4/20 0.35
PTGS2 P35354 3/20 0.35
NAPRT Q6XQN6 2/20 0.35
ELANE P08246 1/20 0.35
LMNA P02545 1/20 0.35
KDM4E B2RXH2 1/20 0.35
ESR1 P03372 1/20 0.35
ITGB3 P05106 1/20 0.35
ITGA2B P08514 1/20 0.35
HMGB1 P09429 1/20 0.35
HPGD P15428 1/20 0.35
GGT1 P19440 1/20 0.35
PTGS1 P23219 1/20 0.35
BLM P54132 1/20 0.35
HSD17B10 Q99714 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
GLA P06280 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27701694 0.85 ALDH1A1 (0.39) ALDH1A1CES2CES1TSHRPTGS2
SCHEMBL27660678 0.83 ALDH1A1 (0.40) ALDH1A1CES2CES1TSHRPTGS2
SCHEMBL7759598 0.83 ELANE (0.41) CES2CES1TSHRELANELMNA
SCHEMBL704394 0.82 PTGS2 (0.39) ALDH1A1CES2CES1TSHRPTGS2
SCHEMBL2711943 0.77 ALDH1A1 (0.43) ALDH1A1CES2CES1TSHRPTGS2
SCHEMBL204167 0.75 ALDH1A1 (0.42) ALDH1A1CES2CES1TSHRPTGS2
SCHEMBL3680214 0.74 TP53 (0.36) ALDH1A1CES2CES1LMNA
SCHEMBL707853 0.74 ALDH1A1 (0.41) ALDH1A1CES2CES1TSHRPTGS2
SCHEMBL6268335 0.73 CA4 (0.35) ALDH1A1PTGS1TDP1
SCHEMBL630589 0.71 TP53 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed