SCHEMBL704615

SCHEMBL704615

CC(=O)O[Si](OC(C)=O)(c1ccccc1)c1ccc([Si](OC(C)=O)(OC(C)=O)c2ccccc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CES2 O00748 1/20 0.41
CES1 P23141 1/20 0.41
ALDH1A1 P00352 4/20 0.41
MAPT P10636 3/20 0.39
ESR1 P03372 2/20 0.39
ESR2 Q92731 1/20 0.39
HPGD P15428 3/20 0.38
TSHR P16473 2/20 0.38
NAPRT Q6XQN6 2/20 0.38
HSD17B10 Q99714 2/20 0.38
ELANE P08246 1/20 0.38
KDM4E B2RXH2 1/20 0.38
ITGB3 P05106 1/20 0.38
ITGA2B P08514 1/20 0.38
HMGB1 P09429 1/20 0.38
GGT1 P19440 1/20 0.38
PTGS1 P23219 1/20 0.38
PTGS2 P35354 1/20 0.38
BLM P54132 1/20 0.38
TDP1 Q9NUW8 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL132756 0.98 CES2 (0.43) CES2CES1ALDH1A1MAPTESR1
SCHEMBL8762487 0.87 CES2 (0.35) CES2CES1ALDH1A1MAPTESR1
SCHEMBL11224422 0.85 MAPT (0.40) CES2CES1ALDH1A1MAPTHPGD
SCHEMBL9488309 0.85 ELANE (0.39) CES2CES1ALDH1A1MAPTESR1
SCHEMBL704476 0.83 CES2 (0.41) CES2CES1ALDH1A1MAPTESR1
SCHEMBL1087730 0.81 CES2 (0.34) CES2CES1ALDH1A1MAPTESR1
SCHEMBL1088007 0.81 CES2 (0.34) CES2CES1ALDH1A1MAPTESR1
SCHEMBL1086753 0.81 CES2 (0.34) CES2CES1ALDH1A1MAPTESR1
SCHEMBL476126 0.80 CES2 (0.43) CES2CES1ALDH1A1MAPTESR1
SCHEMBL132933 0.80 CES2 (0.43) CES2CES1ALDH1A1MAPTESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed