SCHEMBL705071

SCHEMBL705071

CC(C)c1ccccc1O[SiH3]

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 3/20 0.44
GABRB2 P47870 2/20 0.44
P2RX3 P56373 1/20 0.42
P2RX2 Q9UBL9 1/20 0.42
CYP1A2 P05177 3/20 0.41
KMT2A Q03164 3/20 0.41
CYP3A4 P08684 2/20 0.41
NISCH Q9Y2I1 2/20 0.41
MEN1 O00255 2/20 0.41
CYP2C19 P33261 2/20 0.41
CYP2C9 P11712 1/20 0.41
RECQL P46063 1/20 0.41
L3MBTL1 Q9Y468 1/20 0.41
ADRA2A P08913 1/20 0.41
ADRA2B P18089 1/20 0.41
ADRA2C P18825 1/20 0.41
LMNA P02545 3/20 0.41
GABRG2 P18507 2/20 0.41
GABRB3 P28472 2/20 0.41
TSHR P16473 2/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704956 0.83 GABRA1 (0.39) GABRA1GABRB2P2RX3P2RX2CYP1A2
SCHEMBL28728608 0.82 CA1 (0.33) GABRA1GABRB2P2RX3P2RX2CA1
SCHEMBL21059257 0.80 GABRA1 (0.41) GABRA1GABRB2P2RX3P2RX2CYP1A2
SCHEMBL4575432 0.80 P2RX3 (0.58) GABRA1GABRB2P2RX3P2RX2CYP1A2
SCHEMBL31257131 0.80 CA1 (0.60) GABRA1GABRB2P2RX3P2RX2CYP1A2
SCHEMBL29959656 0.80 P2RX3 (0.58) GABRA1GABRB2P2RX3P2RX2CYP1A2
SCHEMBL141647 0.80 CA1 (0.60) GABRA1GABRB2P2RX3P2RX2CYP1A2
SCHEMBL9130041 0.80 GABRA1 (0.48) GABRA1GABRB2P2RX3P2RX2CYP1A2
SCHEMBL28658224 0.79 NISCH (0.44) GABRA1GABRB2P2RX3P2RX2CYP1A2
Ammonia Solution, Strong SCHEMBL28077841 0.78 CA1 (0.57) GABRA1GABRB2P2RX3P2RX2CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109641482-B Preparation of cis-1, 4-polydienes having multiple silane functional groups prepared by in situ hydrosilylation of polymer glues 株式会社普利司通 2021-11-05 CN disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed