⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL706720 | 0.75 | — | — | |
| SCHEMBL19356735 | 0.75 | ALDH1A1 (0.36) | — | |
| SCHEMBL106778 | 0.73 | — | — | |
| SCHEMBL104523 | 0.73 | — | — | |
| SCHEMBL703125 | 0.71 | ADRB2 (0.38) | — | |
| SCHEMBL1532481 | 0.71 | — | — | |
| SCHEMBL4736019 | 0.71 | — | — | |
| Fluoride SCHEMBL5390113 | 0.71 | — | — | |
| SCHEMBL3655422 | 0.71 | — | — | |
| SCHEMBL370773 | 0.71 | DUT (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11059920-B2 | Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions | BRIDGESTONE CORPORATION (JP) | 2021-07-13 | — | — | US | claimed |
| US-20190169330-A1 | Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions | BRIDGESTONE CORPORATION (JP) | 2019-06-06 | — | — | US | claimed |
| EP-3429980-B1 | SURFACE APPLIED CORROSION INHIBITOR | SIKA TECH AG (CH) | 2026-05-13 | — | — | EP | disclosed |
| US-20240199913-A1 | METHOD FOR SUPPRESSING COLLAPSE OF THREE-DIMENSIONAL STRUCTURE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-06-20 | — | — | US | disclosed |
| EP-4309006-A1 | METHOD FOR SUPPRESSING COLLAPSE OF THREE-DIMENSIONAL STRUCTURE | Tokyo Ohka Kogyo Co., Ltd. (JP) | 2024-01-24 | — | — | EP | disclosed |
| WO-2022213043-A1 | METHOD FOR SUPPRESSING COLLAPSE OF THREE-DIMENSIONAL STRUCTURE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2022-10-06 | — | — | WO | disclosed |
| CN-109071366-B | Surface applied corrosion inhibitor | 建筑研究和技术有限公司 | 2022-05-10 | — | — | CN | disclosed |
| CN-109715680-B | Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions | 株式会社普利司通 | 2021-10-19 | — | — | CN | disclosed |
| US-20210214564-A1 | SURFACE APPLIED CORROSION INHIBITOR | SIKA TECHNOLOGY AG (CH) | 2021-07-15 | — | — | US | disclosed |
| US-11059920-B2 | Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions | BRIDGESTONE CORPORATION (JP) | 2021-07-13 | — | — | US | disclosed |
| CN-113024725-A | Curable composition, cured product, (meth) acrylic resin, and compound | 东京应化工业株式会社 | 2021-06-25 | — | — | CN | disclosed |
| US-7786022-B2 | Method for forming insulating film with low dielectric constant | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-31 | — | — | US | disclosed |
| US-7754330-B2 | Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-13 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20090294726-A1 | ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20090294922-A1 | ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | PANASONIC CORPORATION (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20080290521-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080292863-A1 | SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |