SCHEMBL715341

SCHEMBL715341

CC(C)[SiH2]OCCCc1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 1/20 0.50
LMNA P02545 1/20 0.43
FFAR1 O14842 1/20 0.42
SIGMAR1 Q99720 6/20 0.42
HPGD P15428 1/20 0.41
HDAC3 O15379 1/20 0.41
MAPK1 P28482 1/20 0.41
ADRA1A P35348 1/20 0.41
HDAC4 P56524 1/20 0.41
SLC6A3 Q01959 1/20 0.41
HDAC1 Q13547 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.41
HDAC7 Q8WUI4 1/20 0.41
HDAC2 Q92769 1/20 0.41
HDAC10 Q969S8 1/20 0.41
HDAC11 Q96DB2 1/20 0.41
HDAC8 Q9BY41 1/20 0.41
HDAC6 Q9UBN7 1/20 0.41
HDAC9 Q9UKV0 1/20 0.41
HDAC5 Q9UQL6 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707197 0.95 IDO1 (0.44) IDO1FFAR1SIGMAR1
SCHEMBL705406 0.89 TDP1 (0.41) IDO1FFAR1SIGMAR1HPGD
SCHEMBL28656460 0.82 TDP1 (0.37) IDO1FFAR1SIGMAR1
SCHEMBL705170 0.79 IDO1 (0.55) IDO1LMNASIGMAR1ADRA1ASLC6A3
SCHEMBL711282 0.76 TSHR (0.46) IDO1LMNASIGMAR1HPGDMAPK1
SCHEMBL9093635 0.76 IDO1 (0.41) IDO1LMNASIGMAR1
SCHEMBL707359 0.76 IDO1 (0.52) IDO1LMNASIGMAR1ADRA1ASLC6A3
SCHEMBL10794920 0.75 IDO1 (0.55) IDO1LMNAFFAR1SIGMAR1HDAC3
SCHEMBL12530260 0.75 IDO1 (0.55) IDO1LMNASIGMAR1SLC6A3
SCHEMBL1512799 0.74 IDO1 (0.50) IDO1LMNASIGMAR1ADRA1ASLC6A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed