Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | AOC3 | Q16853 | 2/20 | 0.42 |
| ▸ | SLC6A4 | P31645 | 6/20 | 0.41 |
| ▸ | LMNA | P02545 | 2/20 | 0.39 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.38 |
| ▸ | SLC6A2 | P23975 | 5/20 | 0.37 |
| ▸ | CYP1A2 | P05177 | 4/20 | 0.37 |
| ▸ | CYP3A4 | P08684 | 4/20 | 0.37 |
| ▸ | CYP2D6 | P10635 | 4/20 | 0.37 |
| ▸ | HTR2A | P28223 | 4/20 | 0.37 |
| ▸ | HRH1 | P35367 | 4/20 | 0.37 |
| ▸ | TSHR | P16473 | 3/20 | 0.37 |
| ▸ | SLC6A3 | Q01959 | 3/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.37 |
| ▸ | CHRM1 | P11229 | 2/20 | 0.37 |
| ▸ | ADRA2B | P18089 | 2/20 | 0.37 |
| ▸ | HTR2C | P28335 | 2/20 | 0.37 |
| ▸ | OPRM1 | P35372 | 2/20 | 0.37 |
| ▸ | DRD3 | P35462 | 2/20 | 0.37 |
| ▸ | OPRK1 | P41145 | 2/20 | 0.37 |
| ▸ | HTR2B | P41595 | 2/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL703009 | 0.88 | POLB (0.41) | SLC6A4CYP19A1OPRM1OPRK1SIGMAR1 | |
| SCHEMBL702729 | 0.86 | SLC7A5 (0.42) | SLC6A4CYP19A1HTR2AOPRM1OPRK1 | |
| SCHEMBL706088 | 0.85 | CYP19A1 (0.43) | CYP19A1HTR2AOPRM1OPRK1KCNH2 | |
| SCHEMBL704444 | 0.85 | CYP19A1 (0.43) | CYP19A1HTR2AOPRM1OPRK1KCNH2 | |
| SCHEMBL703561 | 0.83 | LMNA (0.46) | AOC3SLC6A4LMNAHTR2AHRH1 | |
| SCHEMBL198055 | 0.83 | AOC3 (0.44) | AOC3SLC6A4LMNASLC6A2CYP1A2 | |
| SCHEMBL10481246 | 0.83 | AOC3 (0.44) | AOC3SLC6A4LMNASLC6A2CYP1A2 | |
| SCHEMBL715339 | 0.82 | POLB (0.41) | AOC3SLC6A4LMNASLC6A2CYP1A2 | |
| SCHEMBL1098807 | 0.81 | AOC3 (0.43) | AOC3SLC6A4LMNASLC6A2CYP1A2 | |
| SCHEMBL11784642 | 0.79 | AOC3 (0.46) | AOC3SLC6A4LMNASLC6A2CYP1A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11807758-B2 | Siloxane polymer and method of producing siloxane polymer | JNC CORPORATION (JP) | 2023-11-07 | — | — | US | disclosed |
| CN-109641482-B | Preparation of cis-1, 4-polydienes having multiple silane functional groups prepared by in situ hydrosilylation of polymer glues | 株式会社普利司通 | 2021-11-05 | — | — | CN | disclosed |
| US-20210238419-A1 | SILOXANE POLYMER AND METHOD OF PRODUCING SILOXANE POLYMER | JNC CORPORATION (JP) | 2021-08-05 | — | — | US | disclosed |
| CN-103998481-B | Controlled architecture polymers | 艾利丹尼森公司 | 2018-02-06 | — | — | CN | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-1539862-B1 | COMPOSITION ACTING AS COUPLING AGENT FOR FILLED AND PEROXIDICALLY CROSSLINKING RUBBER COMPOUNDS | EVONIK DEGUSSA GMBH (DE) | 2009-12-09 | — | — | EP | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-7625975-B2 | Composition acting as coupling agent for filled and peroxidically crosslinking rubber compounds | DEGUSSA AG (DE) | 2009-12-01 | — | — | US | disclosed |
| US-20070032609-A1 | Composition acting as coupling agent for filled and peroxidically crosslinking rubber compounds | DEGUSSA AG (DE) | 2007-02-08 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| CN-1739190-A | Fluorine-free plasma curing method for porous Low-K material | AXCELIS TECH INC (US) | 2006-02-22 | — | — | CN | disclosed |
| EP-1539862-A1 | COMPOSITION ACTING AS COUPLING AGENT FOR FILLED AND PEROXIDICALLY CROSSLINKING RUBBER COMPOUNDS | Degussa AG (DE) | 2005-06-15 | — | — | EP | disclosed |
| WO-2004018546-A1 | COMPOSITION ACTING AS COUPLING AGENT FOR FILLED AND PEROXIDICALLY CROSSLINKING RUBBER COMPOUNDS | DEGUSSA AG (DE) | 2004-03-04 | — | — | WO | disclosed |