SCHEMBL715339

SCHEMBL715339

CC(C)CCC(O[SiH3])c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.41
CTDSP1 Q9GZU7 1/20 0.41
SLC6A4 P31645 5/20 0.40
AOC3 Q16853 3/20 0.38
HTR2A P28223 3/20 0.38
HRH1 P35367 3/20 0.38
TAAR1 Q96RJ0 2/20 0.38
RIPK1 Q13546 1/20 0.37
TDP1 Q9NUW8 1/20 0.36
CYP1A2 P05177 5/20 0.36
CYP3A4 P08684 5/20 0.36
CYP2D6 P10635 5/20 0.36
SLC6A2 P23975 4/20 0.36
SLC6A3 Q01959 4/20 0.36
CHRM1 P11229 3/20 0.36
OPRM1 P35372 3/20 0.36
DRD3 P35462 3/20 0.36
HTR2B P41595 3/20 0.36
KCNH2 Q12809 3/20 0.36
LMNA P02545 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707195 0.89 SLC7A5 (0.39) POLBCTDSP1SLC6A4AOC3HTR2A
SCHEMBL7449480 0.85 POLB (0.44) POLBCTDSP1SLC6A4AOC3HTR2A
SCHEMBL705404 0.82 TAAR1 (0.39) SLC6A4AOC3HRH1TAAR1CYP3A4
SCHEMBL705168 0.82 AOC3 (0.42) SLC6A4AOC3HTR2AHRH1CYP1A2
SCHEMBL703009 0.78 POLB (0.41) POLBSLC6A4OPRM1CASROPRK1
SCHEMBL702729 0.77 SLC7A5 (0.42) POLBSLC6A4HTR2AOPRM1OPRK1
SCHEMBL705122 0.77 RIPK1 (0.56) SLC6A4HTR2AHRH1RIPK1TDP1
SCHEMBL703561 0.77 LMNA (0.46) POLBSLC6A4AOC3HTR2AHRH1
SCHEMBL5666714 0.76 HTR2A (0.57) SLC6A4AOC3HTR2AHRH1TDP1
SCHEMBL3481822 0.76 IDO1 (0.47) SLC6A4CYP3A4CYP2D6SLC6A2SLC6A3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed