SCHEMBL705319

SCHEMBL705319

CCCCOC(C)(OCCCC)[SiH2]c1ccc([SiH2]C(C)(OCCCC)OCCCC)cc1

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 4/20 0.33
CYP1A2 P05177 4/20 0.32
CYP2C19 P33261 4/20 0.32
CYP2C9 P11712 3/20 0.32
NR5A1 Q13285 1/20 0.32
CYP2D6 P10635 4/20 0.32
CYP19A1 P11511 2/20 0.32
TSHR P16473 3/20 0.32
CYP3A4 P08684 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
CA12 O43570 1/20 0.31
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
CA7 P43166 1/20 0.31
CA9 Q16790 1/20 0.31
LMNA P02545 1/20 0.30
ESR1 P03372 1/20 0.30
MAPK1 P28482 1/20 0.30
NR1H2 P55055 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707481 0.88 ALDH1A1 (0.31) LMNAMAPK1SMN1; SMN2
SCHEMBL704751 0.79
SCHEMBL704214 0.78 LTA4H (0.32) LTA4HCYP1A2CYP2C19CYP2C9NR5A1
SCHEMBL706663 0.77 ESR1 (0.32) LTA4HCYP1A2CYP2C19CYP2C9NR5A1
SCHEMBL705597 0.70 TSHR (0.36) TSHRCYP3A4SMN1; SMN2ADRB2ADRB1
SCHEMBL707589 0.70 ADRB2 (0.35) TSHRCYP3A4ADRB2ADRB1ADRB3
SCHEMBL479130 0.69 KCNH2 (0.32) LTA4HMAPK1
SCHEMBL707074 0.68 ADRB2 (0.33) TSHRCYP3A4ADRB2ADRB1ADRB3
SCHEMBL703940 0.68 ADRB2 (0.33) TSHRCYP3A4ADRB2ADRB1ADRB3
SCHEMBL704498 0.65 ALDH1A1 (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed