SCHEMBL713039

SCHEMBL713039

CC(C)[Si](Oc1ccccc1)(Oc1ccccc1)c1ccc([Si](Oc2ccccc2)(Oc2ccccc2)C(C)C)cc1

nearest known ligand 0.37

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.37
LMNA P02545 1/20 0.36
LTA4H P09960 2/20 0.35
TSHR P16473 1/20 0.35
KDM4E B2RXH2 1/20 0.34
MAOA P21397 2/20 0.33
PTGS1 P23219 1/20 0.33
ADRA2A P08913 1/20 0.33
ADRA2B P18089 1/20 0.33
ADRA2C P18825 1/20 0.33
MAOB P27338 1/20 0.33
NISCH Q9Y2I1 1/20 0.33
POLB P06746 1/20 0.32
HTR2A P28223 3/20 0.31
ESR1 P03372 1/20 0.30
ESR2 Q92731 1/20 0.30
MTNR1A P48039 1/20 0.30
MTNR1B P49286 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703525 0.96 CA4 (0.37) CA4LMNALTA4HTSHRKDM4E
SCHEMBL19816748 0.86 CA4 (0.38) CA4LMNALTA4HTSHRKDM4E
SCHEMBL19816740 0.81 LTA4H (0.35) CA4LMNALTA4HMAOAPTGS1
SCHEMBL705345 0.80 CA4 (0.39) CA4LMNALTA4HTSHRKDM4E
SCHEMBL712037 0.76 CA4 (0.39) CA4LMNALTA4HTSHRKDM4E
SCHEMBL706142 0.75 CA4 (0.42) CA4LMNALTA4HTSHRKDM4E
SCHEMBL432208 0.75 CA4 (0.42) CA4LMNALTA4HTSHRKDM4E
SCHEMBL425476 0.75 CA4 (0.42) CA4LMNALTA4HTSHRKDM4E
SCHEMBL704336 0.74 CA4 (0.37) CA4LMNALTA4HTSHRKDM4E
SCHEMBL705691 0.74 LMNA (0.41) CA4LMNALTA4HTSHRKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed