SCHEMBL703525

SCHEMBL703525

CC(C)[Si](Oc1ccccc1)(Oc1ccccc1)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.37
LMNA P02545 1/20 0.36
LTA4H P09960 2/20 0.35
TSHR P16473 1/20 0.35
KDM4E B2RXH2 1/20 0.34
MAOA P21397 2/20 0.33
PTGS1 P23219 1/20 0.33
ADRA2A P08913 1/20 0.33
ADRA2B P18089 1/20 0.33
ADRA2C P18825 1/20 0.33
MAOB P27338 1/20 0.33
NISCH Q9Y2I1 1/20 0.33
POLB P06746 1/20 0.32
HTR2A P28223 3/20 0.31
CCNE1 P24864 1/20 0.30
CDK2 P24941 1/20 0.30
CDK5 Q00535 1/20 0.30
ESR1 P03372 1/20 0.30
ESR2 Q92731 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL713039 0.96 CA4 (0.37) CA4LMNALTA4HTSHRKDM4E
SCHEMBL19816748 0.90 CA4 (0.38) CA4LMNALTA4HTSHRKDM4E
SCHEMBL19816740 0.85 LTA4H (0.35) CA4LMNALTA4HMAOAPTGS1
SCHEMBL712037 0.80 CA4 (0.39) CA4LMNALTA4HTSHRKDM4E
SCHEMBL704336 0.78 CA4 (0.37) CA4LMNALTA4HTSHRKDM4E
SCHEMBL301441 0.77 CA4 (0.35) CA4LMNALTA4HKDM4EPOLB
SCHEMBL705345 0.76 CA4 (0.39) CA4LMNALTA4HTSHRKDM4E
SCHEMBL705651 0.76 ALDH1A1 (0.33) TSHRESR1ESR2
SCHEMBL706142 0.75 CA4 (0.42) CA4LMNALTA4HTSHRKDM4E
SCHEMBL432208 0.75 CA4 (0.42) CA4LMNALTA4HTSHRKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11059920-B2 Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions BRIDGESTONE CORPORATION (JP) 2021-07-13 US claimed
US-20190169330-A1 Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions BRIDGESTONE CORPORATION (JP) 2019-06-06 US claimed
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP claimed
WO-2018022994-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORPORATION (JP) 2018-02-01 WO claimed
CN-109715680-B Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions 株式会社普利司通 2021-10-19 CN disclosed
US-11059920-B2 Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions BRIDGESTONE CORPORATION (JP) 2021-07-13 US disclosed
EP-3491030-B1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORP (JP) 2021-03-24 EP disclosed
US-20190169330-A1 Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions BRIDGESTONE CORPORATION (JP) 2019-06-06 US disclosed
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP disclosed
WO-2018022994-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORPORATION (JP) 2018-02-01 WO disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed