SCHEMBL705405

SCHEMBL705405

CC(C)c1ccccc1C(C)O[SiH3]

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 3/20 0.44
GABRB2 P47870 2/20 0.44
GABRG2 P18507 2/20 0.41
GABRB3 P28472 2/20 0.41
FAAH O00519 2/20 0.41
LMNA P02545 2/20 0.41
CA1 P00915 2/20 0.41
CA2 P00918 2/20 0.41
CYP1A2 P05177 1/20 0.41
CYP3A4 P08684 1/20 0.41
HPGD P15428 1/20 0.41
TSHR P16473 1/20 0.41
GABRB1 P18505 1/20 0.41
PTGS1 P23219 1/20 0.41
SLC6A2 P23975 1/20 0.41
HTR2C P28335 1/20 0.41
GABRA5 P31644 1/20 0.41
GABRA3 P34903 1/20 0.41
HTR2B P41595 1/20 0.41
GABRA2 P47869 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28656463 0.83 GABRA1 (0.39) GABRA1GABRB2GABRG2GABRB3FAAH
SCHEMBL704127 0.80 GABRA1 (0.41) GABRA1GABRB2GABRG2GABRB3FAAH
SCHEMBL704522 0.79 ESR1 (0.52) GABRA1GABRB2LMNACA1CA2
SCHEMBL29429205 0.79 GABRA1 (0.63) GABRA1GABRB2GABRG2GABRB3FAAH
SCHEMBL66162 0.79 GABRA1 (0.63) GABRA1GABRB2GABRG2GABRB3FAAH
SCHEMBL28724146 0.79 TSHR (0.39) GABRA1GABRB2TSHR
SCHEMBL6696764 0.79 CYP2D6 (0.34) GABRA1GABRB2LMNACYP1A2CYP3A4
SCHEMBL28724160 0.79 TSHR (0.53) GABRA1GABRB2TSHRL3MBTL1NISCH
SCHEMBL8750488 0.78 GABRA1 (0.46) GABRA1GABRB2GABRG2GABRB3FAAH
Water SCHEMBL2581333 0.76 GABRA1 (0.60) GABRA1GABRB2GABRG2GABRB3FAAH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN claimed
CN-115181223-A Low-gloss matte auxiliary agent, preparation method thereof and formed body 铨盛聚碳科技股份有限公司 2022-10-14 CN claimed
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN disclosed
CN-115181223-A Low-gloss matte auxiliary agent, preparation method thereof and formed body 铨盛聚碳科技股份有限公司 2022-10-14 CN disclosed
CN-114085382-A Hydrogen-containing poly titanium boron siloxane flame retardant, and preparation method and application thereof 铨盛聚碳科技股份有限公司 2022-02-25 CN disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed