SCHEMBL705409

SCHEMBL705409

CCCCC(C)(CCCC)C(=O)O[SiH3]

nearest known ligand 0.36

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
CYP4F2 P78329 2/20 0.36
CYP4A11 Q02928 2/20 0.36
MEN1 O00255 1/20 0.36
MAPT P10636 1/20 0.36
KMT2A Q03164 1/20 0.36
ATM Q13315 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
CES2 O00748 1/20 0.35
FDPS P14324 6/20 0.33
GGPS1 O95749 3/20 0.33
SMPD1 P17405 3/20 0.33
THRB P10828 1/20 0.32
PKM P14618 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7758102 0.86 LMNA (0.38) CYP4F2CYP4A11MEN1MAPTKMT2A
SCHEMBL20093567 0.83 MAPT (0.43) MEN1MAPTKMT2AATML3MBTL1
SCHEMBL27916266 0.82 CA1 (0.42) CYP4F2CYP4A11MEN1MAPTKMT2A
SCHEMBL21166222 0.81 MAPT (0.46) MEN1MAPTKMT2AATML3MBTL1
SCHEMBL28343978 0.81 MEN1 (0.39) MEN1MAPTKMT2AATML3MBTL1
SCHEMBL703088 0.80 CYP4F2 (0.46) CYP4F2CYP4A11MEN1MAPTKMT2A
SCHEMBL19509955 0.79 CES2 (0.41) MEN1MAPTKMT2AATML3MBTL1
SCHEMBL27898588 0.79 MEN1 (0.53) CYP4F2CYP4A11MEN1MAPTKMT2A
SCHEMBL7059566 0.79 CYP4F2 (0.33) CYP4F2CYP4A11
SCHEMBL18612495 0.78 MAPT (0.47) MEN1MAPTKMT2AATML3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed