SCHEMBL705501

SCHEMBL705501

CC(C)(C)[SiH](Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.42
RIPK1 Q13546 1/20 0.39
LTA4H P09960 4/20 0.39
TSHR P16473 1/20 0.39
MAPK1 P28482 1/20 0.37
ALDH1A1 P00352 2/20 0.34
ALOX15 P16050 1/20 0.34
L3MBTL1 Q9Y468 2/20 0.33
ATM Q13315 1/20 0.33
KCNA3 P22001 1/20 0.33
CA5A P35218 1/20 0.32
CA5B Q9Y2D0 1/20 0.32
CYP2D6 P10635 1/20 0.32
LMNA P02545 2/20 0.31
HTR1D P28221 1/20 0.31
HTR1B P28222 1/20 0.31
NR1H2 P55055 1/20 0.31
BAX Q07812 1/20 0.31
MAOA P21397 1/20 0.31
MEN1 O00255 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21112841 0.89 CA4 (0.42) CA4RIPK1LTA4HTSHRMAPK1
SCHEMBL19927127 0.83 LTA4H (0.38) CA4RIPK1LTA4HTSHRMAPK1
SCHEMBL18417862 0.80 CA4 (0.42) CA4RIPK1LTA4HTSHRMAPK1
SCHEMBL28647701 0.79 CA4 (0.34) CA4RIPK1LTA4HL3MBTL1ATM
SCHEMBL18417864 0.78 CA4 (0.40) CA4RIPK1LTA4HTSHRMAPK1
SCHEMBL18426396 0.76 CA4 (0.39) CA4RIPK1LTA4HTSHRMAPK1
SCHEMBL1051361 0.75 LTA4H (0.39) CA4LTA4HTSHRALDH1A1KCNA3
SCHEMBL706107 0.75 CA4 (0.37) CA4RIPK1LTA4HTSHRMAPK1
SCHEMBL705265 0.74 SLC6A2 (0.45) RIPK1ALDH1A1CYP2D6LMNAKMT2A
SCHEMBL310041 0.70 CA4 (0.48) CA4LTA4HTSHRALDH1A1KCNA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3507104-B1 PRODUCTION OF CIS-1,4-POLYDIENES WITH MULTIPLE SILANE FUNCTIONAL GROUPS PREPARED BYIN-SITU BRIDGESTONE CORP (JP) 2024-03-27 EP disclosed
CN-109641482-B Preparation of cis-1, 4-polydienes having multiple silane functional groups prepared by in situ hydrosilylation of polymer glues 株式会社普利司通 2021-11-05 CN disclosed
CN-109715680-B Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions 株式会社普利司通 2021-10-19 CN disclosed
US-10975178-B2 Production of cis-1,4-polydienes with multiple silane functional groups prepared by in-situ hydrosilylation of polymer cement BRIDGESTONE CORPORATION (JP) 2021-04-13 US disclosed
US-20190211120-A1 Production Of Cis-1,4-Polydienes With Multiple Silane Functional Groups Prepared By In-Situ Hydrosilylation Of Polymer Cement BRIDGESTONE CORPORATION (JP) 2019-07-11 US disclosed
EP-3507104-A1 PRODUCTION OF CIS-1,4-POLYDIENES WITH MULTIPLE SILANE FUNCTIONAL GROUPS PREPARED BYIN-SITU Bridgestone Corporation (JP) 2019-07-10 EP disclosed
WO-2018045291-A1 PRODUCTION OF CIS-1,4-POLYDIENES WITH MULTIPLE SILANE FUNCTIONAL GROUPS PREPARED BY IN-SITU HYDROSILYLATION OF POLYMER CEMENT BRIDGESTONE CORPORATION (JP) 2018-03-08 WO disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
EP-1593149-A1 FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K-MATERIALS Axcelis Technologies, Inc. (US) 2005-11-09 EP disclosed
WO-2004066374-A1 FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K-MATERIALS AXCELIS TECHNOLOGIES, INC. (US) 2004-08-05 WO disclosed