SCHEMBL705566

SCHEMBL705566

CC(C)CC(=O)O[SiH](c1ccccc1)c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GLA P06280 1/20 0.40
TSHR P16473 2/20 0.40
HPGD P15428 3/20 0.39
LMNA P02545 1/20 0.39
RAB9A P51151 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.38
MMP1 P03956 1/20 0.38
MMP2 P08253 1/20 0.38
MMP3 P08254 1/20 0.38
MMP9 P14780 1/20 0.38
MMP13 P45452 1/20 0.38
POLB P06746 1/20 0.38
SLC25A5 P05141 1/20 0.38
ALDH1A1 P00352 4/20 0.37
KMT2A Q03164 3/20 0.37
CYP1A2 P05177 1/20 0.37
MAPT P10636 1/20 0.37
CYP2C9 P11712 1/20 0.37
CYP2C19 P33261 1/20 0.37
ALOX15 P16050 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7057364 0.79 ELANE (0.43) GLATSHRLMNAL3MBTL1ALDH1A1
SCHEMBL28308325 0.76 TSHR (0.48) TSHRLMNARAB9AALDH1A1KMT2A
SCHEMBL7054460 0.76 CES2 (0.43) HPGDLMNARAB9AL3MBTL1POLB
SCHEMBL6054093 0.76 ELANE (0.43) TSHRLMNARAB9AL3MBTL1ALDH1A1
SCHEMBL7055130 0.76 ALDH1A1 (0.42) GLATSHRLMNARAB9AL3MBTL1
SCHEMBL704481 0.75 SMN1; SMN2 (0.40) TSHRHPGDLMNARAB9APOLB
SCHEMBL2711943 0.74 ALDH1A1 (0.43) GLATSHRHPGDLMNAPOLB
SCHEMBL21065529 0.72 TSHR (0.42) TSHRLMNAL3MBTL1POLBALDH1A1
SCHEMBL666155 0.72 POLB (0.47) GLATSHRHPGDLMNARAB9A
SCHEMBL30829390 0.71 MAPT (0.50) TSHRALDH1A1KMT2AMAPTHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed