SCHEMBL704481

SCHEMBL704481

CC(C)(C)CC(=O)O[SiH](c1ccccc1)c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.40
HTT P42858 1/20 0.40
RAB9A P51151 2/20 0.39
NPC1 O15118 1/20 0.39
TP53 P04637 1/20 0.39
GAA P10253 1/20 0.39
MAPT P10636 1/20 0.39
HPGD P15428 1/20 0.39
CYP2C19 P33261 1/20 0.39
HIF1A Q16665 1/20 0.39
MIF P14174 1/20 0.36
LMNA P02545 2/20 0.36
ALDH1A1 P00352 2/20 0.35
HDAC3 O15379 1/20 0.34
HDAC4 P56524 1/20 0.34
HDAC1 Q13547 1/20 0.34
HDAC7 Q8WUI4 1/20 0.34
HDAC2 Q92769 1/20 0.34
HDAC10 Q969S8 1/20 0.34
HDAC11 Q96DB2 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7057364 0.79 ELANE (0.43) SMN1; SMN2HTTGAAMAPTHIF1A
SCHEMBL7054460 0.76 CES2 (0.43) SMN1; SMN2RAB9ANPC1TP53MAPT
SCHEMBL7055130 0.76 ALDH1A1 (0.42) SMN1; SMN2HTTRAB9ANPC1TP53
SCHEMBL705566 0.75 GLA (0.40) SMN1; SMN2HTTRAB9AMAPTHPGD
SCHEMBL6957758 0.75 ALDH1A1 (0.35) SMN1; SMN2HTTGAACYP2C19HIF1A
SCHEMBL2711943 0.74 ALDH1A1 (0.43) SMN1; SMN2GAAMAPTHPGDLMNA
SCHEMBL27576040 0.73 TDP1 (0.50) RAB9ANPC1TP53MAPTCYP2C19
SCHEMBL21065529 0.72 TSHR (0.42) MAPTCYP2C19LMNAALDH1A1POLB
SCHEMBL2448081 0.72 L3MBTL1 (0.47) SMN1; SMN2HTTRAB9ANPC1TP53
SCHEMBL14312306 0.71 CES2 (0.49) LMNATSHRTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed